Quantitative raman spectrum and reliable thickness identification for atomic layers on insulating substrates

Song Lin Li, Hisao Miyazaki, Haisheng Song, Hiromi Kuramochi, Shu Nakaharai, Kazuhito Tsukagoshi

Research output: Contribution to journalArticlepeer-review

280 Citations (Scopus)


We demonstrate the possibility in quantifying the Raman intensities for both specimen and substrate layers in a common stacked experimental configuration and, consequently, propose a general and rapid thickness identification technique for atomic-scale layers on dielectric substrates. Unprecedentedly wide-range Raman data for atomically flat MoS 2 flakes are collected to compare with theoretical models. We reveal that all intensity features can be accurately captured when including optical interference effect. Surprisingly, we find that even freely suspended chalcogenide few-layer flakes have a stronger Raman response than that from the bulk phase. Importantly, despite the oscillating intensity of specimen spectrum versus thickness, the substrate weighted spectral intensity becomes monotonic. Combined with its sensitivity to specimen thickness, we suggest this quantity can be used to rapidly determine the accurate thickness for atomic layers.

Original languageEnglish
Pages (from-to)7381-7388
Number of pages8
JournalACS Nano
Issue number8
Publication statusPublished - 2012 Aug 28
Externally publishedYes


  • atomic layer
  • characterization
  • nanomaterial
  • Raman enhancement

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)


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