Quantitative measurement of dopant concentration profiling by scanning nonlinear dielectric microscopy

Kenya Ishikawa, Koichiro Honda, Yasuo Cho

Research output: Contribution to journalConference articlepeer-review

Abstract

Using a scanning nonlinear dielectric microscopy (SNDM), we observed standard Si sample with epitaxial staircase structures, which has known dopant density values calibrated by using secondary ion mass spectroscopy (SIMS). As the result, good quantitative correlation between dopant density values and SNDM signals was obtained without the phenomenon of contrast reversal effect, which is associated with conventional scanning capacitance microscopy (SCM) measurements. Thus, it is expected that SNDM will be an effective method for observing the quantitative measurement of two-dimensional dopant profiling on semiconductor devices.

Original languageEnglish
Pages (from-to)14-19
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume1025
Publication statusPublished - 2008 Dec 1
EventNanoscale Phenomena in Functional Materials by Scanning Probe Microscopy - Boston, MA, United States
Duration: 2007 Nov 262007 Nov 30

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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