Quantitative Measurement of Active Dopant Density Distribution in Black Silicon Solar Cell Using Scanning Nonlinear Dielectric Microscopy

Yasuo Cho; Beniamino Iandolo; Ole Hansen

doi:10.1109/PVSC48317.2022.9938925

Quantitative Measurement of Active Dopant Density Distribution in Black Silicon Solar Cell Using Scanning Nonlinear Dielectric Microscopy

Yasuo Cho, Beniamino Iandolo, Ole Hansen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigated quantitatively the carrier distribution in a phosphorous (P) diffused black Silicon (Si) solar cell using scanning nonlinear dielectric microscopy (SNDM). As a reference, we measured the carrier distribution on a flat Si sample fabricated under the same P diffusion conditions. The precise carrier distributions in the emitter were visualized, which revealed the feature of carrier distribution in the emitter of black Si solar cell. Super-higher-order-SNDM was also employed to perform a quantitative analysis of the depletion layer distribution. It was found that the carrier density profile and the depletion layer thickness is less regular in the black Si than in the flat emitter, suggesting that this fluctuation may affect the power conversion efficiency of black Si solar cell.

Original language	English
Title of host publication	2022 IEEE 49th Photovoltaics Specialists Conference, PVSC 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	461-463
Number of pages	3
ISBN (Electronic)	9781728161174
DOIs	https://doi.org/10.1109/PVSC48317.2022.9938925
Publication status	Published - 2022
Event	49th IEEE Photovoltaics Specialists Conference, PVSC 2022 - Philadelphia, United States Duration: 2022 Jun 5 → 2022 Jun 10

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	2022-June
ISSN (Print)	0160-8371

Conference

Conference	49th IEEE Photovoltaics Specialists Conference, PVSC 2022
Country/Territory	United States
City	Philadelphia
Period	22/6/5 → 22/6/10

Keywords

black silicon solar cell
carrier profiling
depletion layer
scanning nonlinear dielectric microscopy
super-higher-order scanning nonlinear dielectric microscopy

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC48317.2022.9938925

Cite this

Cho, Y., Iandolo, B., & Hansen, O. (2022). Quantitative Measurement of Active Dopant Density Distribution in Black Silicon Solar Cell Using Scanning Nonlinear Dielectric Microscopy. In 2022 IEEE 49th Photovoltaics Specialists Conference, PVSC 2022 (pp. 461-463). (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2022-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC48317.2022.9938925

Quantitative Measurement of Active Dopant Density Distribution in Black Silicon Solar Cell Using Scanning Nonlinear Dielectric Microscopy. / Cho, Yasuo; Iandolo, Beniamino; Hansen, Ole.

2022 IEEE 49th Photovoltaics Specialists Conference, PVSC 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 461-463 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2022-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Cho, Y, Iandolo, B & Hansen, O 2022, Quantitative Measurement of Active Dopant Density Distribution in Black Silicon Solar Cell Using Scanning Nonlinear Dielectric Microscopy. in 2022 IEEE 49th Photovoltaics Specialists Conference, PVSC 2022. Conference Record of the IEEE Photovoltaic Specialists Conference, vol. 2022-June, Institute of Electrical and Electronics Engineers Inc., pp. 461-463, 49th IEEE Photovoltaics Specialists Conference, PVSC 2022, Philadelphia, United States, 22/6/5. https://doi.org/10.1109/PVSC48317.2022.9938925

Cho Y, Iandolo B, Hansen O. Quantitative Measurement of Active Dopant Density Distribution in Black Silicon Solar Cell Using Scanning Nonlinear Dielectric Microscopy. In 2022 IEEE 49th Photovoltaics Specialists Conference, PVSC 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 461-463. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC48317.2022.9938925

Cho, Yasuo ; Iandolo, Beniamino ; Hansen, Ole. / Quantitative Measurement of Active Dopant Density Distribution in Black Silicon Solar Cell Using Scanning Nonlinear Dielectric Microscopy. 2022 IEEE 49th Photovoltaics Specialists Conference, PVSC 2022. Institute of Electrical and Electronics Engineers Inc., 2022. pp. 461-463 (Conference Record of the IEEE Photovoltaic Specialists Conference).

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abstract = "We investigated quantitatively the carrier distribution in a phosphorous (P) diffused black Silicon (Si) solar cell using scanning nonlinear dielectric microscopy (SNDM). As a reference, we measured the carrier distribution on a flat Si sample fabricated under the same P diffusion conditions. The precise carrier distributions in the emitter were visualized, which revealed the feature of carrier distribution in the emitter of black Si solar cell. Super-higher-order-SNDM was also employed to perform a quantitative analysis of the depletion layer distribution. It was found that the carrier density profile and the depletion layer thickness is less regular in the black Si than in the flat emitter, suggesting that this fluctuation may affect the power conversion efficiency of black Si solar cell.",

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N2 - We investigated quantitatively the carrier distribution in a phosphorous (P) diffused black Silicon (Si) solar cell using scanning nonlinear dielectric microscopy (SNDM). As a reference, we measured the carrier distribution on a flat Si sample fabricated under the same P diffusion conditions. The precise carrier distributions in the emitter were visualized, which revealed the feature of carrier distribution in the emitter of black Si solar cell. Super-higher-order-SNDM was also employed to perform a quantitative analysis of the depletion layer distribution. It was found that the carrier density profile and the depletion layer thickness is less regular in the black Si than in the flat emitter, suggesting that this fluctuation may affect the power conversion efficiency of black Si solar cell.

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Quantitative Measurement of Active Dopant Density Distribution in Black Silicon Solar Cell Using Scanning Nonlinear Dielectric Microscopy

Abstract

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Keywords

ASJC Scopus subject areas

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