TY - GEN
T1 - Quantitative imaging of mos interface trap distribution by using local deep level transient spectroscopy
AU - Chinone, Norimichi
AU - Cho, Yasuo
N1 - Funding Information:
This work is partially supported by SIP (No. P14029) from NEDO and Grand-in-Aid for Scientific Research S(16H06360) from Japan Society for the promotion of Science (JSPS).
Publisher Copyright:
© 2018 IEEE.
PY - 2018/8/30
Y1 - 2018/8/30
N2 - The local deep level transient spectroscopy, which measures traps with high lateral resolution using sharp tip, was investigated as functions of DC bias. The results showed that the physical origin which was detected by local-DLTS was mainly interface trap. Furthermore, two-dimensional (2D) quantitative profiling of interface traps as a function of time constant was demonstrated. Comparison between images of different time constant revealed that interface traps with different time constant had different lateral distribution, which suggests that 2D distribution of interface traps depends on their energy level. These results show that local-DLTsis promising for microscopic investigation of interface traps.
AB - The local deep level transient spectroscopy, which measures traps with high lateral resolution using sharp tip, was investigated as functions of DC bias. The results showed that the physical origin which was detected by local-DLTS was mainly interface trap. Furthermore, two-dimensional (2D) quantitative profiling of interface traps as a function of time constant was demonstrated. Comparison between images of different time constant revealed that interface traps with different time constant had different lateral distribution, which suggests that 2D distribution of interface traps depends on their energy level. These results show that local-DLTsis promising for microscopic investigation of interface traps.
KW - Interface trap
KW - Local deep level transient spectroscopy
KW - Scanning nonlinear dielectric microscopy
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U2 - 10.1109/IPFA.2018.8452565
DO - 10.1109/IPFA.2018.8452565
M3 - Conference contribution
AN - SCOPUS:85053919234
SN - 9781538649299
T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
BT - IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018
Y2 - 16 July 2018 through 19 July 2018
ER -