Quantitative imaging of mos interface trap distribution by using local deep level transient spectroscopy

Norimichi Chinone, Yasuo Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The local deep level transient spectroscopy, which measures traps with high lateral resolution using sharp tip, was investigated as functions of DC bias. The results showed that the physical origin which was detected by local-DLTS was mainly interface trap. Furthermore, two-dimensional (2D) quantitative profiling of interface traps as a function of time constant was demonstrated. Comparison between images of different time constant revealed that interface traps with different time constant had different lateral distribution, which suggests that 2D distribution of interface traps depends on their energy level. These results show that local-DLTsis promising for microscopic investigation of interface traps.

Original languageEnglish
Title of host publicationIPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781538649299
DOIs
Publication statusPublished - 2018 Aug 30
Event25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018 - Singapore, Singapore
Duration: 2018 Jul 162018 Jul 19

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume2018-July

Other

Other25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018
Country/TerritorySingapore
CitySingapore
Period18/7/1618/7/19

Keywords

  • Interface trap
  • Local deep level transient spectroscopy
  • Scanning nonlinear dielectric microscopy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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