Quantitative imaging of mos interface trap distribution by using local deep level transient spectroscopy

Norimichi Chinone; Yasuo Cho

doi:10.1109/IPFA.2018.8452565

Quantitative imaging of mos interface trap distribution by using local deep level transient spectroscopy

Norimichi Chinone, Yasuo Cho

Information Devices Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The local deep level transient spectroscopy, which measures traps with high lateral resolution using sharp tip, was investigated as functions of DC bias. The results showed that the physical origin which was detected by local-DLTS was mainly interface trap. Furthermore, two-dimensional (2D) quantitative profiling of interface traps as a function of time constant was demonstrated. Comparison between images of different time constant revealed that interface traps with different time constant had different lateral distribution, which suggests that 2D distribution of interface traps depends on their energy level. These results show that local-DLTsis promising for microscopic investigation of interface traps.

Original language	English
Title of host publication	IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781538649299
DOIs	https://doi.org/10.1109/IPFA.2018.8452565
Publication status	Published - 2018 Aug 30
Event	25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018 - Singapore, Singapore Duration: 2018 Jul 16 → 2018 Jul 19

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume	2018-July

Other

Other	25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018
Country	Singapore
City	Singapore
Period	18/7/16 → 18/7/19

Keywords

Interface trap
Local deep level transient spectroscopy
Scanning nonlinear dielectric microscopy

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/IPFA.2018.8452565

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Cite this

Chinone, N., & Cho, Y. (2018). Quantitative imaging of mos interface trap distribution by using local deep level transient spectroscopy. In IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits [8452565] (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2018-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA.2018.8452565

Quantitative imaging of mos interface trap distribution by using local deep level transient spectroscopy. / Chinone, Norimichi; Cho, Yasuo.

IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits. Institute of Electrical and Electronics Engineers Inc., 2018. 8452565 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2018-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chinone, N & Cho, Y 2018, Quantitative imaging of mos interface trap distribution by using local deep level transient spectroscopy. in IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits., 8452565, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, vol. 2018-July, Institute of Electrical and Electronics Engineers Inc., 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018, Singapore, Singapore, 18/7/16. https://doi.org/10.1109/IPFA.2018.8452565

Chinone N, Cho Y. Quantitative imaging of mos interface trap distribution by using local deep level transient spectroscopy. In IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits. Institute of Electrical and Electronics Engineers Inc. 2018. 8452565. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2018.8452565

Chinone, Norimichi ; Cho, Yasuo. / Quantitative imaging of mos interface trap distribution by using local deep level transient spectroscopy. IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits. Institute of Electrical and Electronics Engineers Inc., 2018. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

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abstract = "The local deep level transient spectroscopy, which measures traps with high lateral resolution using sharp tip, was investigated as functions of DC bias. The results showed that the physical origin which was detected by local-DLTS was mainly interface trap. Furthermore, two-dimensional (2D) quantitative profiling of interface traps as a function of time constant was demonstrated. Comparison between images of different time constant revealed that interface traps with different time constant had different lateral distribution, which suggests that 2D distribution of interface traps depends on their energy level. These results show that local-DLTsis promising for microscopic investigation of interface traps.",

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