Quantitative control and detection of heterovalent impurities in ZnO thin films grown by pulsed laser deposition

M. Sumiya; S. Fuke; A. Tsukazaki; K. Tamura; A. Ohtomo; M. Kawasaki; H. Koinuma

doi:10.1063/1.1542938

Quantitative control and detection of heterovalent impurities in ZnO thin films grown by pulsed laser deposition

M. Sumiya, S. Fuke, A. Tsukazaki, K. Tamura, A. Ohtomo, M. Kawasaki, H. Koinuma

Materials Property Division

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

The heterovalent impurities in ZnO thin films, prepared by pulsed laser deposition were analyzed using secondary ion mass spectroscopy (SIMS). It was found that alternative ablation was effective not only for achieving systematic control of Ga concentration but also for minimizing the contamination of undesired impurities. The composition spread sample included a region with the correct concentration ratio.

Original language	English
Pages (from-to)	2562-2569
Number of pages	8
Journal	Journal of Applied Physics
Volume	93
Issue number	5
DOIs	https://doi.org/10.1063/1.1542938
Publication status	Published - 2003 Mar 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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AU - Kawasaki, M.

AU - Koinuma, H.

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