Abstract
The heterovalent impurities in ZnO thin films, prepared by pulsed laser deposition were analyzed using secondary ion mass spectroscopy (SIMS). It was found that alternative ablation was effective not only for achieving systematic control of Ga concentration but also for minimizing the contamination of undesired impurities. The composition spread sample included a region with the correct concentration ratio.
Original language | English |
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Pages (from-to) | 2562-2569 |
Number of pages | 8 |
Journal | Journal of Applied Physics |
Volume | 93 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2003 Mar 1 |
ASJC Scopus subject areas
- Physics and Astronomy(all)