Abstract
A PIXE (particle induced X-ray emission) method for analyzing impurities in solid materials was developed using a crystal spectrometer combined with a position sensitive proportional counter (PSPC). Numerical expressions for quantitative analysis of impurities by this method are established. This technique was applied to the nondestructive measurement of P in a-Si matrix. The concentration of P obtained in this method is 0.717%, which is consistent with the value of 0.68% deduced from the Auger electron spectroscopy.
| Original language | English |
|---|---|
| Pages (from-to) | 75-79 |
| Number of pages | 5 |
| Journal | Nuclear Inst. and Methods in Physics Research, B |
| Volume | 35 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1988 Nov |
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Instrumentation
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Hamanaka, H., Ohura, M., Yamamoto, Y., Morita, S., Iwamura, K., & Ishii, K. (1988). Quantitative analysis of phosphorus in amorphous silicon using PIXE with a crystal spectrometer and PIPC. Nuclear Inst. and Methods in Physics Research, B, 35(1), 75-79. https://doi.org/10.1016/0168-583X(88)90100-0