TY - JOUR
T1 - Quantitative analysis of phosphorus in amorphous silicon using PIXE with a crystal spectrometer and PIPC
AU - Hamanaka, H.
AU - Ohura, M.
AU - Yamamoto, Y.
AU - Morita, S.
AU - Iwamura, K.
AU - Ishii, K.
N1 - Funding Information:
The authors acknowledge also the support of the Special Project Research on Ion Beam Interactions with Solids from the Ministry of Education, Science and Culture.
PY - 1988/11
Y1 - 1988/11
N2 - A PIXE (particle induced X-ray emission) method for analyzing impurities in solid materials was developed using a crystal spectrometer combined with a position sensitive proportional counter (PSPC). Numerical expressions for quantitative analysis of impurities by this method are established. This technique was applied to the nondestructive measurement of P in a-Si matrix. The concentration of P obtained in this method is 0.717%, which is consistent with the value of 0.68% deduced from the Auger electron spectroscopy.
AB - A PIXE (particle induced X-ray emission) method for analyzing impurities in solid materials was developed using a crystal spectrometer combined with a position sensitive proportional counter (PSPC). Numerical expressions for quantitative analysis of impurities by this method are established. This technique was applied to the nondestructive measurement of P in a-Si matrix. The concentration of P obtained in this method is 0.717%, which is consistent with the value of 0.68% deduced from the Auger electron spectroscopy.
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U2 - 10.1016/0168-583X(88)90100-0
DO - 10.1016/0168-583X(88)90100-0
M3 - Article
AN - SCOPUS:0024105299
VL - 35
SP - 75
EP - 79
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
IS - 1
ER -