Quantitative analysis of phosphorus in amorphous silicon using PIXE with a crystal spectrometer and PIPC

H. Hamanaka, M. Ohura, Y. Yamamoto, S. Morita, K. Iwamura, K. Ishii

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

A PIXE (particle induced X-ray emission) method for analyzing impurities in solid materials was developed using a crystal spectrometer combined with a position sensitive proportional counter (PSPC). Numerical expressions for quantitative analysis of impurities by this method are established. This technique was applied to the nondestructive measurement of P in a-Si matrix. The concentration of P obtained in this method is 0.717%, which is consistent with the value of 0.68% deduced from the Auger electron spectroscopy.

Original languageEnglish
Pages (from-to)75-79
Number of pages5
JournalNuclear Inst. and Methods in Physics Research, B
Volume35
Issue number1
DOIs
Publication statusPublished - 1988 Nov

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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