Quantitative analysis of interstitial Mg in Mg2Si studied by single crystal X-ray diffraction

M. Kubouchi, K. Hayashi, Y. Miyazaki

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)

Abstract

We investigate the existence of Mg at an interstitial (1/2 1/2 1/2) site of Mg-deficient Mg2Si samples, whose nominal composition is Mg 2-xSi (x = 0, 0.095, 0.182, 0.260, and 0.333). Single-crystal X-ray diffraction measurements indicate that the interstitial Mg (Mgi) is contained in all samples, and its occupancy is around 0.5% regardless of x. This result is supported by the Hamilton test: a hypothesis that the Mgi exists in the Mg2-xSi samples is not rejected at the significant level below 0.10. On the other hand, the Mg occupancy at an (1/4 1/4 1/4) site tends to decrease with increasing x. The Seebeck coefficient and electrical conductivity of Mg2-xSi is discussed in terms of the x dependence of Mgi (1/2 1/2 1/2) and Mg (1/4 1/4 1/4) site occupancies.

Original languageEnglish
Pages (from-to)389-392
Number of pages4
JournalJournal of Alloys and Compounds
Volume617
DOIs
Publication statusPublished - 2014 Dec 25

Keywords

  • Interstitial Mg
  • Magnesium silicide
  • Single-crystal structure refinement
  • Thermoelectric properties

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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