Quantification of Spin Drift in Devices with a Heavily Doped Si Channel

A. Spiesser, Y. Fujita, H. Saito, S. Yamada, K. Hamaya, W. Mizubayashi, K. Endo, S. Yuasa, R. Jansen

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5 Citations (Scopus)

Abstract

The effect of a drift electric field on the spin transport in a heavily doped Si channel is investigated using nonlocal devices. A simple method to accurately quantify spin drift is established, using the ratio of the nonlocal spin-valve signal for two measurement configurations that have a different electric field pattern in the channel. The spin-transport length is obtained as a function of the electric field, and it is found that in heavily doped Si, drift electric fields of ±400 V/cm modify the spin-transport length (either up or down) by about a factor of two, relative to the length scale for purely diffusive transport. Although the trends are in agreement with the theory for spin drift, a quantitative comparison reveals that the theory significantly overestimates the effect of spin drift (by a factor of three). This highlights that an accurate experimental quantification of spin drift, as provided here, is crucial for a correct assessment of the role and importance of spin drift in practical spin-transport devices.

Original languageEnglish
Article number044020
JournalPhysical Review Applied
Volume11
Issue number4
DOIs
Publication statusPublished - 2019 Apr 8
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Spiesser, A., Fujita, Y., Saito, H., Yamada, S., Hamaya, K., Mizubayashi, W., Endo, K., Yuasa, S., & Jansen, R. (2019). Quantification of Spin Drift in Devices with a Heavily Doped Si Channel. Physical Review Applied, 11(4), [044020]. https://doi.org/10.1103/PhysRevApplied.11.044020