Quality of SiO 2 and of SiGe formed by oxidation of Si/Si 0.7 Ge 0.3 heterostructure using atomic oxygen at 400 °C

H. Nohira, T. Kuroiwa, M. Nakamura, Y. Hirose, J. Mitsui, W. Sakai, K. Nakajima, M. Suzuki, K. Kimura, K. Sawano, K. Nakagawa, Y. Shiraki, T. Hattori

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    6 Citations (Scopus)


    The oxidation of a 2.7-nm-thick layer of Si formed on a layer of Si 0.7 Ge 0.3 using atomic oxygen at 400 °C was studied with the aid of angle-resolved X-ray photoelectron spectroscopy and high-resolution Rutherford backscattering spectroscopy. Analysis of the measurement results revealed that: (1) an appreciable number of Ge atoms diffused into the Si layer during the formation of a 3-nm-thick Si layer on the Si 0.7 Ge 0.3 layer at 720 °C; (2) when the entire Si layer was oxidized, 1.8% of the Si layer remained in the SiO 2 in the form of Si 0.7 Ge 0.3 alloy; and (3) an abrupt compositional transition took place at the SiO 2 /SiGe interface.

    Original languageEnglish
    Pages (from-to)134-138
    Number of pages5
    JournalApplied Surface Science
    Issue number1-4
    Publication statusPublished - 2004 Oct 15


    • Angle-resolved photoelectron spectroscopy
    • Depth profiling
    • Rutherford back scattering
    • SiO /Si interface

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Physics and Astronomy(all)
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

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