Quality of SiO 2 and of SiGe formed by oxidation of Si/Si 0.7 Ge 0.3 heterostructure using atomic oxygen at 400 °C

H. Nohira, T. Kuroiwa, M. Nakamura, Y. Hirose, J. Mitsui, W. Sakai, K. Nakajima, M. Suzuki, K. Kimura, K. Sawano, K. Nakagawa, Y. Shiraki, T. Hattori

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6 Citations (Scopus)


The oxidation of a 2.7-nm-thick layer of Si formed on a layer of Si 0.7 Ge 0.3 using atomic oxygen at 400 °C was studied with the aid of angle-resolved X-ray photoelectron spectroscopy and high-resolution Rutherford backscattering spectroscopy. Analysis of the measurement results revealed that: (1) an appreciable number of Ge atoms diffused into the Si layer during the formation of a 3-nm-thick Si layer on the Si 0.7 Ge 0.3 layer at 720 °C; (2) when the entire Si layer was oxidized, 1.8% of the Si layer remained in the SiO 2 in the form of Si 0.7 Ge 0.3 alloy; and (3) an abrupt compositional transition took place at the SiO 2 /SiGe interface.

Original languageEnglish
Pages (from-to)134-138
Number of pages5
JournalApplied Surface Science
Issue number1-4
Publication statusPublished - 2004 Oct 15
Externally publishedYes


  • Angle-resolved photoelectron spectroscopy
  • Depth profiling
  • Rutherford back scattering
  • SiO /Si interface

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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