PVT growth of Cd1-xZnxTe(x ∼ 0.04) films sensitive to radial rays

Junichi Takahashi; Katsumi Mochizuki; Keitaro Hitomi; Tadayoshi Shoji

doi:10.1016/j.jcrysgro.2004.05.068

PVT growth of Cd_1-xZn_xTe(x ∼ 0.04) films sensitive to radial rays

Junichi Takahashi, Katsumi Mochizuki, Keitaro Hitomi, Tadayoshi Shoji

ENG - Quantum Science and Energy Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Cd_1-xZn_xTe(x ∼ 0.04) poly-crystalline films with a thickness of less than 300 μm are grown on an ITO/glass substrate by physical vapor transport method, and the films are evaluated as a detector for radial rays. A reservoir chamber containing CdCl₂ powders is provided at one end of the growth tube for obtaining films with high electrical resistance and for reducing the leakage current of the device. A relation between the growth conditions and the characteristics of the grown film is clarified, and the film grown under one of the suitable conditions shows sensitivity to radial rays.

Original language	English
Pages (from-to)	448-453
Number of pages	6
Journal	Journal of Crystal Growth
Volume	269
Issue number	2-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.05.068
Publication status	Published - 2004 Sep 1

Keywords

A1. Characterization
A3. Physical vapor deposition processes
B1. Cadmium compounds
B2. Semiconducting II-VI materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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@article{ce02f184aa1845d1a0f8acdc4f94b6cd,

title = "PVT growth of Cd1-xZnxTe(x ∼ 0.04) films sensitive to radial rays",

abstract = "Cd1-xZnxTe(x ∼ 0.04) poly-crystalline films with a thickness of less than 300 μm are grown on an ITO/glass substrate by physical vapor transport method, and the films are evaluated as a detector for radial rays. A reservoir chamber containing CdCl2 powders is provided at one end of the growth tube for obtaining films with high electrical resistance and for reducing the leakage current of the device. A relation between the growth conditions and the characteristics of the grown film is clarified, and the film grown under one of the suitable conditions shows sensitivity to radial rays.",

keywords = "A1. Characterization, A3. Physical vapor deposition processes, B1. Cadmium compounds, B2. Semiconducting II-VI materials",

author = "Junichi Takahashi and Katsumi Mochizuki and Keitaro Hitomi and Tadayoshi Shoji",

year = "2004",

month = sep,

day = "1",

doi = "10.1016/j.jcrysgro.2004.05.068",

language = "English",

volume = "269",

pages = "448--453",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "2-4",

}

TY - JOUR

T1 - PVT growth of Cd1-xZnxTe(x ∼ 0.04) films sensitive to radial rays

AU - Takahashi, Junichi

AU - Mochizuki, Katsumi

AU - Hitomi, Keitaro

AU - Shoji, Tadayoshi

PY - 2004/9/1

Y1 - 2004/9/1

N2 - Cd1-xZnxTe(x ∼ 0.04) poly-crystalline films with a thickness of less than 300 μm are grown on an ITO/glass substrate by physical vapor transport method, and the films are evaluated as a detector for radial rays. A reservoir chamber containing CdCl2 powders is provided at one end of the growth tube for obtaining films with high electrical resistance and for reducing the leakage current of the device. A relation between the growth conditions and the characteristics of the grown film is clarified, and the film grown under one of the suitable conditions shows sensitivity to radial rays.

AB - Cd1-xZnxTe(x ∼ 0.04) poly-crystalline films with a thickness of less than 300 μm are grown on an ITO/glass substrate by physical vapor transport method, and the films are evaluated as a detector for radial rays. A reservoir chamber containing CdCl2 powders is provided at one end of the growth tube for obtaining films with high electrical resistance and for reducing the leakage current of the device. A relation between the growth conditions and the characteristics of the grown film is clarified, and the film grown under one of the suitable conditions shows sensitivity to radial rays.

KW - A1. Characterization

KW - A3. Physical vapor deposition processes

KW - B1. Cadmium compounds

KW - B2. Semiconducting II-VI materials

UR - http://www.scopus.com/inward/record.url?scp=4344682123&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4344682123&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2004.05.068

DO - 10.1016/j.jcrysgro.2004.05.068

M3 - Article

AN - SCOPUS:4344682123

VL - 269

SP - 448

EP - 453

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 2-4

ER -