Pump-probe spectroscopy of low-temperature grown gaAs for carrier lifetime estimation: Arsenic pressure dependence of carrier lifetime during MBE crystal growth

Ryuzi Yano, Yoshiro Hirayama, Sen Miyashita, Hiroyuki Sasabu, Naoshi Uesugi, Shingo Uehara

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

We have performed reflection-type degenerate pump-probe spectroscopy to measure the carrier lifetime of GaAs grown by molecular beam epitaxy (MBE) at 250°C under four different effective arsenic pressures. The temporal behavior of the reflected probe pulse intensity strongly depends on both the wavelength and the intensity of the exciting laser pulse. The overall feature can be interpreted by the carrier-density- and wavelength-dependent refractive index change caused by the bandgap shrinkage, band filling, and plasma effect. We also found that the carrier lifetime depends on the effective arsenic pressure during the MBE growth, which is considered to determine the density of the defects in the GaAs. A carrier lifetime of 1.9 ps was obtained when GaAs was grown under the highest effective arsenic pressure at 250°C and subsequently annealed at 650°C.

Original languageEnglish
Pages (from-to)93-98
Number of pages6
JournalPhysics Letters, Section A: General, Atomic and Solid State Physics
Volume289
Issue number1-2
DOIs
Publication statusPublished - 2001 Oct 8
Externally publishedYes

Keywords

  • Anneal
  • Career lifetime
  • Defect
  • Low-temperature grown GaAs
  • Pump-probe spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Pump-probe spectroscopy of low-temperature grown gaAs for carrier lifetime estimation: Arsenic pressure dependence of carrier lifetime during MBE crystal growth'. Together they form a unique fingerprint.

  • Cite this