Pulsed-source MOCVD of high-k dielectric thin films with in situ monitoring by spectroscopic ellipsometry

Yoshishige Tsuchiya, Masato Endoh, Masatoshi Kurosawa, Raymond T. Tung, Takeo Hattori, Shunri Oda

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


The formation of high-k thin films by pulsed-source metal-organic chemical vapor deposition (MOCVD) has been investigated with in situ spectroscopic ellipsometry. It is demonstrated that spectroscopic ellipsometry is an effective method for in situ monitoring of the fabrication of high-k dielectric thin films with thicknesses of several nm's. Thin yttrium oxide films with average roughnesses smaller than the thickness of a single molecular layer, and with a capacitance equivalent thickness ∼ 1.7 nm were obtained. Thicknesses and optical properties of each individual layer were also extracted from spectroscopic ellipsometry, by fitting to appropriate structural models.

Original languageEnglish
Pages (from-to)1957-1961
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number4 B
Publication statusPublished - 2003 Apr
Externally publishedYes


  • High-k dielectric thin film
  • In situ monitoring of film growth
  • Pulsed-source MOCVD
  • Spectroscopic ellipsometry

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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