Pulsed-source MOCVD of high-k dielectric thin films with in situ monitoring by spectroscopic ellipsometry

Yoshishige Tsuchiya; Masato Endoh; Masatoshi Kurosawa; Raymond T. Tung; Takeo Hattori; Shunri Oda

doi:10.1143/jjap.42.1957

Pulsed-source MOCVD of high-k dielectric thin films with in situ monitoring by spectroscopic ellipsometry

Yoshishige Tsuchiya, Masato Endoh, Masatoshi Kurosawa, Raymond T. Tung, Takeo Hattori, Shunri Oda

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The formation of high-k thin films by pulsed-source metal-organic chemical vapor deposition (MOCVD) has been investigated with in situ spectroscopic ellipsometry. It is demonstrated that spectroscopic ellipsometry is an effective method for in situ monitoring of the fabrication of high-k dielectric thin films with thicknesses of several nm's. Thin yttrium oxide films with average roughnesses smaller than the thickness of a single molecular layer, and with a capacitance equivalent thickness ∼ 1.7 nm were obtained. Thicknesses and optical properties of each individual layer were also extracted from spectroscopic ellipsometry, by fitting to appropriate structural models.

Original language	English
Pages (from-to)	1957-1961
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	42
Issue number	4 B
DOIs	https://doi.org/10.1143/jjap.42.1957
Publication status	Published - 2003 Apr
Externally published	Yes

Keywords

High-k dielectric thin film
In situ monitoring of film growth
Pulsed-source MOCVD
Spectroscopic ellipsometry

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.42.1957

Cite this

Pulsed-source MOCVD of high-k dielectric thin films with in situ monitoring by spectroscopic ellipsometry. / Tsuchiya, Yoshishige; Endoh, Masato; Kurosawa, Masatoshi; Tung, Raymond T.; Hattori, Takeo; Oda, Shunri.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, No. 4 B, 04.2003, p. 1957-1961.

Research output: Contribution to journal › Article › peer-review

@article{8bde2f2ebdda45478e72ea56dc07b576,

title = "Pulsed-source MOCVD of high-k dielectric thin films with in situ monitoring by spectroscopic ellipsometry",

abstract = "The formation of high-k thin films by pulsed-source metal-organic chemical vapor deposition (MOCVD) has been investigated with in situ spectroscopic ellipsometry. It is demonstrated that spectroscopic ellipsometry is an effective method for in situ monitoring of the fabrication of high-k dielectric thin films with thicknesses of several nm's. Thin yttrium oxide films with average roughnesses smaller than the thickness of a single molecular layer, and with a capacitance equivalent thickness ∼ 1.7 nm were obtained. Thicknesses and optical properties of each individual layer were also extracted from spectroscopic ellipsometry, by fitting to appropriate structural models.",

keywords = "High-k dielectric thin film, In situ monitoring of film growth, Pulsed-source MOCVD, Spectroscopic ellipsometry",

author = "Yoshishige Tsuchiya and Masato Endoh and Masatoshi Kurosawa and Tung, {Raymond T.} and Takeo Hattori and Shunri Oda",

year = "2003",

month = apr,

doi = "10.1143/jjap.42.1957",

language = "English",

volume = "42",

pages = "1957--1961",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 B",

}

TY - JOUR

T1 - Pulsed-source MOCVD of high-k dielectric thin films with in situ monitoring by spectroscopic ellipsometry

AU - Tsuchiya, Yoshishige

AU - Endoh, Masato

AU - Kurosawa, Masatoshi

AU - Tung, Raymond T.

AU - Hattori, Takeo

AU - Oda, Shunri

PY - 2003/4

Y1 - 2003/4

N2 - The formation of high-k thin films by pulsed-source metal-organic chemical vapor deposition (MOCVD) has been investigated with in situ spectroscopic ellipsometry. It is demonstrated that spectroscopic ellipsometry is an effective method for in situ monitoring of the fabrication of high-k dielectric thin films with thicknesses of several nm's. Thin yttrium oxide films with average roughnesses smaller than the thickness of a single molecular layer, and with a capacitance equivalent thickness ∼ 1.7 nm were obtained. Thicknesses and optical properties of each individual layer were also extracted from spectroscopic ellipsometry, by fitting to appropriate structural models.

AB - The formation of high-k thin films by pulsed-source metal-organic chemical vapor deposition (MOCVD) has been investigated with in situ spectroscopic ellipsometry. It is demonstrated that spectroscopic ellipsometry is an effective method for in situ monitoring of the fabrication of high-k dielectric thin films with thicknesses of several nm's. Thin yttrium oxide films with average roughnesses smaller than the thickness of a single molecular layer, and with a capacitance equivalent thickness ∼ 1.7 nm were obtained. Thicknesses and optical properties of each individual layer were also extracted from spectroscopic ellipsometry, by fitting to appropriate structural models.

KW - High-k dielectric thin film

KW - In situ monitoring of film growth

KW - Pulsed-source MOCVD

KW - Spectroscopic ellipsometry

UR - http://www.scopus.com/inward/record.url?scp=0038348024&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038348024&partnerID=8YFLogxK

U2 - 10.1143/jjap.42.1957

DO - 10.1143/jjap.42.1957

M3 - Article

AN - SCOPUS:0038348024

VL - 42

SP - 1957

EP - 1961

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 B

ER -

Pulsed-source MOCVD of high-k dielectric thin films with in situ monitoring by spectroscopic ellipsometry

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this