Pulsed-source MOCVD of high-k dielectric thin films with in situ monitoring by spectroscopic ellipsometry

Yoshishige Tsuchiya, Masato Endoh, Masatoshi Kurosawa, Raymond T. Tung, Takeo Hattori, Shunri Oda

    Research output: Contribution to journalArticlepeer-review

    6 Citations (Scopus)

    Abstract

    The formation of high-k thin films by pulsed-source metal-organic chemical vapor deposition (MOCVD) has been investigated with in situ spectroscopic ellipsometry. It is demonstrated that spectroscopic ellipsometry is an effective method for in situ monitoring of the fabrication of high-k dielectric thin films with thicknesses of several nm's. Thin yttrium oxide films with average roughnesses smaller than the thickness of a single molecular layer, and with a capacitance equivalent thickness ∼ 1.7 nm were obtained. Thicknesses and optical properties of each individual layer were also extracted from spectroscopic ellipsometry, by fitting to appropriate structural models.

    Original languageEnglish
    Pages (from-to)1957-1961
    Number of pages5
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume42
    Issue number4 B
    DOIs
    Publication statusPublished - 2003 Apr

    Keywords

    • High-k dielectric thin film
    • In situ monitoring of film growth
    • Pulsed-source MOCVD
    • Spectroscopic ellipsometry

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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