Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH

Hiroyuki Oguchi; Shigehito Isobe; Hiroki Kuwano; Susumu Shiraki; Shin Ichi Orimo; Taro Hitosugi

doi:10.1063/1.4931080

Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH

Hiroyuki Oguchi, Shigehito Isobe, Hiroki Kuwano, Susumu Shiraki, Shin Ichi Orimo, Taro Hitosugi

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We report on the epitaxial thin film growth of an air-sensitive hydride, lithium hydride (LiH), using pulsed laser deposition (PLD). We first synthesized a dense LiH target, which is key for PLD growth of high-quality hydride films. Then, we obtained epitaxial thin films of [100]-oriented LiH on a MgO(100) substrate at 250°C under a hydrogen pressure of 1.3 × 10^-2 Pa. Atomic force microscopy revealed that the film demonstrates a Stranski-Krastanov growth mode and that the film with a thickness of ∼10 nm has a good surface flatness, with root-mean-square roughness R_RMS of ∼0.4 nm.

Original language	English
Article number	096106
Journal	APL Materials
Volume	3
Issue number	9
DOIs	https://doi.org/10.1063/1.4931080
Publication status	Published - 2015 Sep 1

ASJC Scopus subject areas

Materials Science(all)
Engineering(all)

Access to Document

10.1063/1.4931080

Fingerprint Dive into the research topics of 'Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH'. Together they form a unique fingerprint.

Cite this

@article{3f9f1b1f976949c9bc9b63f9c8541a7b,

title = "Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH",

abstract = "We report on the epitaxial thin film growth of an air-sensitive hydride, lithium hydride (LiH), using pulsed laser deposition (PLD). We first synthesized a dense LiH target, which is key for PLD growth of high-quality hydride films. Then, we obtained epitaxial thin films of [100]-oriented LiH on a MgO(100) substrate at 250°C under a hydrogen pressure of 1.3 × 10-2 Pa. Atomic force microscopy revealed that the film demonstrates a Stranski-Krastanov growth mode and that the film with a thickness of ∼10 nm has a good surface flatness, with root-mean-square roughness RRMS of ∼0.4 nm.",

author = "Hiroyuki Oguchi and Shigehito Isobe and Hiroki Kuwano and Susumu Shiraki and Orimo, {Shin Ichi} and Taro Hitosugi",

year = "2015",

month = sep,

day = "1",

doi = "10.1063/1.4931080",

language = "English",

volume = "3",

journal = "APL Materials",

issn = "2166-532X",

publisher = "American Institute of Physics Publising LLC",

number = "9",

}

TY - JOUR

T1 - Pulsed laser deposition of air-sensitive hydride epitaxial thin films

T2 - LiH

AU - Oguchi, Hiroyuki

AU - Isobe, Shigehito

AU - Kuwano, Hiroki

AU - Shiraki, Susumu

AU - Orimo, Shin Ichi

AU - Hitosugi, Taro

PY - 2015/9/1

Y1 - 2015/9/1

N2 - We report on the epitaxial thin film growth of an air-sensitive hydride, lithium hydride (LiH), using pulsed laser deposition (PLD). We first synthesized a dense LiH target, which is key for PLD growth of high-quality hydride films. Then, we obtained epitaxial thin films of [100]-oriented LiH on a MgO(100) substrate at 250°C under a hydrogen pressure of 1.3 × 10-2 Pa. Atomic force microscopy revealed that the film demonstrates a Stranski-Krastanov growth mode and that the film with a thickness of ∼10 nm has a good surface flatness, with root-mean-square roughness RRMS of ∼0.4 nm.

AB - We report on the epitaxial thin film growth of an air-sensitive hydride, lithium hydride (LiH), using pulsed laser deposition (PLD). We first synthesized a dense LiH target, which is key for PLD growth of high-quality hydride films. Then, we obtained epitaxial thin films of [100]-oriented LiH on a MgO(100) substrate at 250°C under a hydrogen pressure of 1.3 × 10-2 Pa. Atomic force microscopy revealed that the film demonstrates a Stranski-Krastanov growth mode and that the film with a thickness of ∼10 nm has a good surface flatness, with root-mean-square roughness RRMS of ∼0.4 nm.

UR - http://www.scopus.com/inward/record.url?scp=84942754010&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84942754010&partnerID=8YFLogxK

U2 - 10.1063/1.4931080

DO - 10.1063/1.4931080

M3 - Article

AN - SCOPUS:84942754010

VL - 3

JO - APL Materials

JF - APL Materials

SN - 2166-532X

IS - 9

M1 - 096106

ER -