Pulsed laser deposition and ionic liquid gate control of epitaxial Bi 2Se3 thin films

Yoshinori Onose; Ryutaro Yoshimi; Atsushi Tsukazaki; Hongtao Yuan; Takeaki Hidaka; Yoshihiro Iwasa; Masashi Kawasaki; Yoshinori Tokura

doi:10.1143/APEX.4.083001

Pulsed laser deposition and ionic liquid gate control of epitaxial Bi ₂Se₃ thin films

Yoshinori Onose, Ryutaro Yoshimi, Atsushi Tsukazaki, Hongtao Yuan, Takeaki Hidaka, Yoshihiro Iwasa, Masashi Kawasaki, Yoshinori Tokura

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

High-quality epitaxial thin films of the topological insulator Bi ₂Se₃ with atomically flat surfaces have been grown on InP(111)A substrates by means of pulsed laser deposition, which can target a variety of materials for the further chemical tuning of topological insulators. Utilizing an ionic liquid gate structure fabricated on the top of a thin (∼6 nm thick) film, we have controlled the sheet carrier density n_sheet (up to Δn_sheet ∼ 1:3 × 1014 cm^-2). The sharp negative magnetoconductance due to the two-dimensional weak antilocalization has been observed and the phase coherence length is modulated with the gate voltage.

Original language	English
Article number	083001
Journal	Applied Physics Express
Volume	4
Issue number	8
DOIs	https://doi.org/10.1143/APEX.4.083001
Publication status	Published - 2011 Aug

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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@article{8e7fc271747f402586387034e4823096,

title = "Pulsed laser deposition and ionic liquid gate control of epitaxial Bi 2Se3 thin films",

abstract = "High-quality epitaxial thin films of the topological insulator Bi 2Se3 with atomically flat surfaces have been grown on InP(111)A substrates by means of pulsed laser deposition, which can target a variety of materials for the further chemical tuning of topological insulators. Utilizing an ionic liquid gate structure fabricated on the top of a thin (∼6 nm thick) film, we have controlled the sheet carrier density nsheet (up to Δnsheet ∼ 1:3 × 1014 cm-2). The sharp negative magnetoconductance due to the two-dimensional weak antilocalization has been observed and the phase coherence length is modulated with the gate voltage.",

author = "Yoshinori Onose and Ryutaro Yoshimi and Atsushi Tsukazaki and Hongtao Yuan and Takeaki Hidaka and Yoshihiro Iwasa and Masashi Kawasaki and Yoshinori Tokura",

year = "2011",

month = aug,

doi = "10.1143/APEX.4.083001",

language = "English",

volume = "4",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "8",

}

TY - JOUR

T1 - Pulsed laser deposition and ionic liquid gate control of epitaxial Bi 2Se3 thin films

AU - Onose, Yoshinori

AU - Yoshimi, Ryutaro

AU - Tsukazaki, Atsushi

AU - Yuan, Hongtao

AU - Hidaka, Takeaki

AU - Iwasa, Yoshihiro

AU - Kawasaki, Masashi

AU - Tokura, Yoshinori

PY - 2011/8

Y1 - 2011/8

N2 - High-quality epitaxial thin films of the topological insulator Bi 2Se3 with atomically flat surfaces have been grown on InP(111)A substrates by means of pulsed laser deposition, which can target a variety of materials for the further chemical tuning of topological insulators. Utilizing an ionic liquid gate structure fabricated on the top of a thin (∼6 nm thick) film, we have controlled the sheet carrier density nsheet (up to Δnsheet ∼ 1:3 × 1014 cm-2). The sharp negative magnetoconductance due to the two-dimensional weak antilocalization has been observed and the phase coherence length is modulated with the gate voltage.

AB - High-quality epitaxial thin films of the topological insulator Bi 2Se3 with atomically flat surfaces have been grown on InP(111)A substrates by means of pulsed laser deposition, which can target a variety of materials for the further chemical tuning of topological insulators. Utilizing an ionic liquid gate structure fabricated on the top of a thin (∼6 nm thick) film, we have controlled the sheet carrier density nsheet (up to Δnsheet ∼ 1:3 × 1014 cm-2). The sharp negative magnetoconductance due to the two-dimensional weak antilocalization has been observed and the phase coherence length is modulated with the gate voltage.

UR - http://www.scopus.com/inward/record.url?scp=80051588818&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80051588818&partnerID=8YFLogxK

U2 - 10.1143/APEX.4.083001

DO - 10.1143/APEX.4.083001

M3 - Article

AN - SCOPUS:80051588818

VL - 4

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 8

M1 - 083001

ER -