TY - JOUR
T1 - Pulsed laser deposition and ionic liquid gate control of epitaxial Bi 2Se3 thin films
AU - Onose, Yoshinori
AU - Yoshimi, Ryutaro
AU - Tsukazaki, Atsushi
AU - Yuan, Hongtao
AU - Hidaka, Takeaki
AU - Iwasa, Yoshihiro
AU - Kawasaki, Masashi
AU - Tokura, Yoshinori
N1 - Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2011/8
Y1 - 2011/8
N2 - High-quality epitaxial thin films of the topological insulator Bi 2Se3 with atomically flat surfaces have been grown on InP(111)A substrates by means of pulsed laser deposition, which can target a variety of materials for the further chemical tuning of topological insulators. Utilizing an ionic liquid gate structure fabricated on the top of a thin (∼6 nm thick) film, we have controlled the sheet carrier density nsheet (up to Δnsheet ∼ 1:3 × 1014 cm-2). The sharp negative magnetoconductance due to the two-dimensional weak antilocalization has been observed and the phase coherence length is modulated with the gate voltage.
AB - High-quality epitaxial thin films of the topological insulator Bi 2Se3 with atomically flat surfaces have been grown on InP(111)A substrates by means of pulsed laser deposition, which can target a variety of materials for the further chemical tuning of topological insulators. Utilizing an ionic liquid gate structure fabricated on the top of a thin (∼6 nm thick) film, we have controlled the sheet carrier density nsheet (up to Δnsheet ∼ 1:3 × 1014 cm-2). The sharp negative magnetoconductance due to the two-dimensional weak antilocalization has been observed and the phase coherence length is modulated with the gate voltage.
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U2 - 10.1143/APEX.4.083001
DO - 10.1143/APEX.4.083001
M3 - Article
AN - SCOPUS:80051588818
VL - 4
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 8
M1 - 083001
ER -