Pulsed laser deposition and ionic liquid gate control of epitaxial Bi 2Se3 thin films

Yoshinori Onose, Ryutaro Yoshimi, Atsushi Tsukazaki, Hongtao Yuan, Takeaki Hidaka, Yoshihiro Iwasa, Masashi Kawasaki, Yoshinori Tokura

Research output: Contribution to journalArticlepeer-review

44 Citations (Scopus)


High-quality epitaxial thin films of the topological insulator Bi 2Se3 with atomically flat surfaces have been grown on InP(111)A substrates by means of pulsed laser deposition, which can target a variety of materials for the further chemical tuning of topological insulators. Utilizing an ionic liquid gate structure fabricated on the top of a thin (∼6 nm thick) film, we have controlled the sheet carrier density nsheet (up to Δnsheet ∼ 1:3 × 1014 cm-2). The sharp negative magnetoconductance due to the two-dimensional weak antilocalization has been observed and the phase coherence length is modulated with the gate voltage.

Original languageEnglish
Article number083001
JournalApplied Physics Express
Issue number8
Publication statusPublished - 2011 Aug
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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