Pulse-time-modulated plasma etching for high performance polysilicon patterning on thin gate oxides

Hiroto Ohtake, Seiji Samukawa, Ko Noguchi, Hidekazu Iida, Arthur Sato, Xue yu Qian

Research output: Contribution to conferencePaperpeer-review

3 Citations (Scopus)

Abstract

This paper reports a high performance gate electrode patterning technology which uses a HBr/Cl2/O2 gas mixture in a pulse-time-modulated, inductively-coupled plasma (ICP) etcher. We observed that when the plasma is cycled ON and OFF at a rate of a few tens of microseconds, the deposition and charging on the substrate surface can be precisely controlled. As a result, plasma etching can be performed with no topography-dependent charging, no trenching of the gate oxide, and with extremely high selectivities to resist and gate oxide. These results are also obtainable with modifications to conventional etch systems.

Original languageEnglish
Pages37-40
Number of pages4
Publication statusPublished - 1999 Dec 1
Externally publishedYes
EventProceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID) - Monterey, CA, USA
Duration: 1999 May 91999 May 11

Other

OtherProceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID)
CityMonterey, CA, USA
Period99/5/999/5/11

ASJC Scopus subject areas

  • Engineering(all)

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