Abstract
This paper reports a high performance gate electrode patterning technology which uses a HBr/Cl2/O2 gas mixture in a pulse-time-modulated, inductively-coupled plasma (ICP) etcher. We observed that when the plasma is cycled ON and OFF at a rate of a few tens of microseconds, the deposition and charging on the substrate surface can be precisely controlled. As a result, plasma etching can be performed with no topography-dependent charging, no trenching of the gate oxide, and with extremely high selectivities to resist and gate oxide. These results are also obtainable with modifications to conventional etch systems.
Original language | English |
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Pages | 37-40 |
Number of pages | 4 |
Publication status | Published - 1999 Dec 1 |
Externally published | Yes |
Event | Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID) - Monterey, CA, USA Duration: 1999 May 9 → 1999 May 11 |
Other
Other | Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID) |
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City | Monterey, CA, USA |
Period | 99/5/9 → 99/5/11 |
ASJC Scopus subject areas
- Engineering(all)