Pulse-time-modulated plasma etching for high performance polysilicon patterning on thin gate oxides

Hiroto Ohtake; Seiji Samukawa; Ko Noguchi; Hidekazu Iida; Arthur Sato; Xue yu Qian

Pulse-time-modulated plasma etching for high performance polysilicon patterning on thin gate oxides

Hiroto Ohtake, Seiji Samukawa, Ko Noguchi, Hidekazu Iida, Arthur Sato, Xue yu Qian

Research output: Contribution to conference › Paper › peer-review

Abstract

This paper reports a high performance gate electrode patterning technology which uses a HBr/Cl₂/O₂ gas mixture in a pulse-time-modulated, inductively-coupled plasma (ICP) etcher. We observed that when the plasma is cycled ON and OFF at a rate of a few tens of microseconds, the deposition and charging on the substrate surface can be precisely controlled. As a result, plasma etching can be performed with no topography-dependent charging, no trenching of the gate oxide, and with extremely high selectivities to resist and gate oxide. These results are also obtainable with modifications to conventional etch systems.

Original language	English
Pages	37-40
Number of pages	4
Publication status	Published - 1999 Dec 1
Externally published	Yes
Event	Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID) - Monterey, CA, USA Duration: 1999 May 9 → 1999 May 11

Other

Other	Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID)
City	Monterey, CA, USA
Period	99/5/9 → 99/5/11

ASJC Scopus subject areas

Engineering(all)

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Pulse-time-modulated plasma etching for high performance polysilicon patterning on thin gate oxides. / Ohtake, Hiroto; Samukawa, Seiji; Noguchi, Ko; Iida, Hidekazu; Sato, Arthur; Qian, Xue yu.

1999. 37-40 Paper presented at Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID), Monterey, CA, USA, .

Research output: Contribution to conference › Paper › peer-review

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abstract = "This paper reports a high performance gate electrode patterning technology which uses a HBr/Cl2/O2 gas mixture in a pulse-time-modulated, inductively-coupled plasma (ICP) etcher. We observed that when the plasma is cycled ON and OFF at a rate of a few tens of microseconds, the deposition and charging on the substrate surface can be precisely controlled. As a result, plasma etching can be performed with no topography-dependent charging, no trenching of the gate oxide, and with extremely high selectivities to resist and gate oxide. These results are also obtainable with modifications to conventional etch systems.",

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AU - Ohtake, Hiroto

AU - Samukawa, Seiji

AU - Noguchi, Ko

AU - Iida, Hidekazu

AU - Sato, Arthur

AU - Qian, Xue yu

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N2 - This paper reports a high performance gate electrode patterning technology which uses a HBr/Cl2/O2 gas mixture in a pulse-time-modulated, inductively-coupled plasma (ICP) etcher. We observed that when the plasma is cycled ON and OFF at a rate of a few tens of microseconds, the deposition and charging on the substrate surface can be precisely controlled. As a result, plasma etching can be performed with no topography-dependent charging, no trenching of the gate oxide, and with extremely high selectivities to resist and gate oxide. These results are also obtainable with modifications to conventional etch systems.

AB - This paper reports a high performance gate electrode patterning technology which uses a HBr/Cl2/O2 gas mixture in a pulse-time-modulated, inductively-coupled plasma (ICP) etcher. We observed that when the plasma is cycled ON and OFF at a rate of a few tens of microseconds, the deposition and charging on the substrate surface can be precisely controlled. As a result, plasma etching can be performed with no topography-dependent charging, no trenching of the gate oxide, and with extremely high selectivities to resist and gate oxide. These results are also obtainable with modifications to conventional etch systems.

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