Pulse-time-modulated inductively coupled plasma etching for high-performance polysilicon patterning on thin gate oxides

Hiroto Ohtake, Ko Noguchi, Seiji Samukawa, Hidekazu Iida, Arthur Sato, Xue yu Qian

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

Charge-free poly-Si MOSFET etching is analyzed based on the effects of pulse-time-modulated inductively coupled plasma with HBr gas. It is shown that the etching and deposition on the substrate surface can be controlled when the HBr plasma is cycled ON and OFF as a rate of a few tens of microseconds. During the pulse-OFF time, the electron temperature decreases.

Original languageEnglish
Pages (from-to)2495-2499
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number5
DOIs
Publication statusPublished - 2000 Sep 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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