Charge-free poly-Si MOSFET etching is analyzed based on the effects of pulse-time-modulated inductively coupled plasma with HBr gas. It is shown that the etching and deposition on the substrate surface can be controlled when the HBr plasma is cycled ON and OFF as a rate of a few tens of microseconds. During the pulse-OFF time, the electron temperature decreases.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2000 Sep 1|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering