This paper proposes a new electron cyclotron resonance (ECR) plasma etching for precise gate electrode patterning in future ULSI circuits such as 1Gbit DRAM. In this technology, 10 μ sec pulse-time modulated microwaves are introduced into the plasma chamber. The ECR plasma etching technique achieves highly selective (≥ 100), high-rate (≥ 3000 A/min), highly anisotropic (even at 100% over-etching), notching-free and less-charging submicron poly-Si patterning.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|Publication status||Published - 1994 Dec 1|
|Event||Proceedings of the 1994 Symposium on VLSI Technology - Honolulu, HI, USA|
Duration: 1994 Jun 7 → 1994 Jun 9
ASJC Scopus subject areas
- Electrical and Electronic Engineering