Pulse-time modulated ECR plasma etching for highly selective, highly anisotropic and less-charging poly-Si gate patterning

Seiji Samukawa, Kazuo Terada

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

This paper proposes a new electron cyclotron resonance (ECR) plasma etching for precise gate electrode patterning in future ULSI circuits such as 1Gbit DRAM. In this technology, 10 μ sec pulse-time modulated microwaves are introduced into the plasma chamber. The ECR plasma etching technique achieves highly selective (≥ 100), high-rate (≥ 3000 A/min), highly anisotropic (even at 100% over-etching), notching-free and less-charging submicron poly-Si patterning.

Original languageEnglish
Pages (from-to)27-28
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Publication statusPublished - 1994 Dec 1
Externally publishedYes
EventProceedings of the 1994 Symposium on VLSI Technology - Honolulu, HI, USA
Duration: 1994 Jun 71994 Jun 9

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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