Pulse-time-modulated ECR plasma discharge for highly selective, highly anisotropic and charge-free etching

Seiji Samukawa, Hiroto Ohtake, Tetsu Mieno

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Highly selective, highly anisotropic, notch-free, and charge-build-up damage-free silicon etching is performed by using Electron Cyclotron Resonance (ECR) Cl2 plasma modulated at a pulse timing of a few tens of microseconds. A large quantity of negative ions are produced in the afterglow of the pulse-time-modulated plasma. The decay times of electron density, electron temperature, and sheath potential are considerably reduced, which is attributable to negative-ion generation. Furthermore, the pulse-time-modulated plasma reduces the time averaged sheath potential. As a result of these effects, charged particles in the sheath are strongly modified from the continuous discharge, and they should improve the selective etching in the pulsed ECR plasma and eliminates charge accumulation on the substrate.

Original languageEnglish
Title of host publicationNEC Research & Development
PublisherNippon Electric Co
Pages179-190
Number of pages12
Volume37
Edition2
Publication statusPublished - 1996 Apr 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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    Samukawa, S., Ohtake, H., & Mieno, T. (1996). Pulse-time-modulated ECR plasma discharge for highly selective, highly anisotropic and charge-free etching. In NEC Research & Development (2 ed., Vol. 37, pp. 179-190). Nippon Electric Co.