Abstract
We studied the on-state voltage reduction of a light-triggered thyristor from the viewpoints of reduced thyristor thickness and realization of a high-injection low-lifetime structure. The reduced thickness was achieved through a p--layer punch-through structure. The high-injection was achieved by a thick, highly-doped region for the p-emitter. The on-state voltage of a 6-kV 5.5-kA light-triggered thyristor with the p--layer punch-through structure and with the thick, high concentration p-emitter was reduced by about 0.2 V.
| Original language | English |
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| Pages | 225-228 |
| Number of pages | 4 |
| Publication status | Published - 1998 Jan 1 |
| Externally published | Yes |
| Event | Proceedings of the 1998 10th International Symposium on Power Semiconductor Devices & ICs, ISPSD'98 - Kyoto, Jpn Duration: 1998 Jun 3 → 1998 Jun 6 |
Other
| Other | Proceedings of the 1998 10th International Symposium on Power Semiconductor Devices & ICs, ISPSD'98 |
|---|---|
| City | Kyoto, Jpn |
| Period | 98/6/3 → 98/6/6 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering