p--Layer punch-through-structure with high concentration p-emitter for a light-triggered thyristor

Shuji Katoh, Jai Ho Choi, Takeshi Yokota, Atsuo Watanabe, Tetsuo Yamaguchi, Katsuaki Saito

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)

Abstract

We studied the on-state voltage reduction of a light-triggered thyristor from the viewpoints of reduced thyristor thickness and realization of a high-injection low-lifetime structure. The reduced thickness was achieved through a p--layer punch-through structure. The high-injection was achieved by a thick, highly-doped region for the p-emitter. The on-state voltage of a 6-kV 5.5-kA light-triggered thyristor with the p--layer punch-through structure and with the thick, high concentration p-emitter was reduced by about 0.2 V.

Original languageEnglish
Pages225-228
Number of pages4
Publication statusPublished - 1998 Jan 1
Externally publishedYes
EventProceedings of the 1998 10th International Symposium on Power Semiconductor Devices & ICs, ISPSD'98 - Kyoto, Jpn
Duration: 1998 Jun 31998 Jun 6

Other

OtherProceedings of the 1998 10th International Symposium on Power Semiconductor Devices & ICs, ISPSD'98
CityKyoto, Jpn
Period98/6/398/6/6

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'p<sup>-</sup>-Layer punch-through-structure with high concentration p-emitter for a light-triggered thyristor'. Together they form a unique fingerprint.

Cite this