Pseudo-binary alloying system of ZnO-AgGaO2 reducing the energy band gap of zinc oxide

I. Suzuki, H. Nagatani, Y. Arima, M. Kita, T. Omata

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13 Citations (Scopus)


Pseudo-binary oxide semiconductor alloy films of (1-x)ZnO-x(AgGaO 2)1/2 were fabricated using a conventional rf-magnetron sputtering. The wurtzite-type single phases were obtained in the wide composition range of x ≤ 0.33 because the terminal β-AgGaO2 that corresponds to the composition with x = 1 possesses a wurtzite-derived β-NaFeO2 structure. The energy band gap of ZnO decreased with increasing AgGaO2 concentration, falling to 2.55 eV at x = 0.33. This alloy system enables to use ZnO-based semiconductors in optoelectronic devices working in visible region.

Original languageEnglish
Article number222107
JournalApplied Physics Letters
Issue number22
Publication statusPublished - 2013 Nov 25
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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