Protonic defect induced carrier doping in TTFCOO -NH 4 +: Tunable doping level by solvent

Takeshi Terauchi, Yuka Kobayashi, Hideo Iwai, Akihiro Tanaka

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


The origin of carrier doping in TTFCOO -NH 4 + has been verified to include protonic defect in salt bridge by means of X-ray photoelectron spectroscopy (XPS), for the first time. The emergence of spin in TTFCOO -NH 4 + is tunable over quite a wide range (9-33%) only by selecting a suitable solvent for the salt crystallization. The spin concentration of the solvent-dependent salts weakly correlates with intensity of optical absorption in near-infrared region, values of g-tensor and dc conductivity at rt. The solvents determining doping level of the salt are classified into three categories by self-dissociation ability (pK SH) of solvent, which likely controls inclusion of protonic defect in the salts.

Original languageEnglish
Pages (from-to)531-535
Number of pages5
JournalSynthetic Metals
Issue number5-6
Publication statusPublished - 2012 Apr
Externally publishedYes


  • Carrier doping
  • Charge transport
  • Protonic defect
  • Salt bridge
  • XPS

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry


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