Prospects of Hf-based gate dielectrics by PVD with FUSI gate for LSTP application

M. Niwa, R. Mitsuhashi, S. Hayashi, K. Yamamoto, Y. Harada, M. Kubota, A. Rothchild, T. Hoffmann, S. Kubicek, A. Lauwers, J. A. Kittl, S. De Gendt, M. Heyns, S. Biesemans

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Study of Hf-based high-k gate stack prepared by PVD-HfO2 and its silicate with Ni-Fully Silicide(FUSI) gate focusing on interfacial reaction between high-k and Ni-FUSI electrode is overviewed. Effects of SiN capping between Ni-FUSI gate and high-k dielectric and post deposition anneal (PDA) to suppress the reaction during FUSI process were investigated. The SiN cap could increase transistor yield and PDA could suppress instability of the drive current due to defects/roughness caused by interfacial reaction during NiSi formation. It is noteworthy that not only elimination of poly-Si depletion but also EOT reduction was observed by replacing the poly-Si with the Ni-FUSI, which was remarkable for Ni-FUSI/SiON than HfO2 case. Hereof, by optimizing the PDA condition with SiN cap, decent electrical characteristics were obtained, Ion(n/p) > 600/200 uA/um at Ioff = 20 pA/um at Vdd = 1.1V. This drivability meets low stand-by power specification of the MOSFET for 45 nm node. copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationPhysics and Technology of High-k Gate Dielectrics III
PublisherElectrochemical Society Inc.
Pages269-285
Number of pages17
Edition5
ISBN (Electronic)1566774446
DOIs
Publication statusPublished - 2006
Externally publishedYes
Event3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society - Los Angeles, CA, United States
Duration: 2005 Oct 162005 Oct 21

Publication series

NameECS Transactions
Number5
Volume1
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society
Country/TerritoryUnited States
CityLos Angeles, CA
Period05/10/1605/10/21

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint

Dive into the research topics of 'Prospects of Hf-based gate dielectrics by PVD with FUSI gate for LSTP application'. Together they form a unique fingerprint.

Cite this