Proposal of new nonvolatile memory with magnetic nano-dots

Takeshi Sakaguchi, Youn Gi Hong, Motoki Kobayashi, Masaaki Takata, Hoon Choi, Jeoung Chill Shim, Hiroyuki Kurino, Mitsumasa Koyanagi

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

In this study, a new nonvolatile memory with magnetic nano-dots (MNDs) was proposed. A relatively large anisotropic change of gate current-voltage characteristics by the magnetization in magnetic non-volatile memory with Co nano floating gate and Ni-Fe control gate was obtained. A Co magnetic nano-dot film with very high dot density of 2 × 1013 cm-2 was successfully formed by sputtering with optimized target composition. A small anisotropic change of gate current-voltage characteristics by the magnetization in MND memory with Co MNDs and Ni-Fe control gate was observed.

Original languageEnglish
Pages (from-to)2203-2206
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number4 B
DOIs
Publication statusPublished - 2004 Apr

Keywords

  • Carrier tunneling probability
  • MND
  • Magnetic floating gate
  • Ni-Fe control gate
  • Retention characteristic

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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  • Cite this

    Sakaguchi, T., Hong, Y. G., Kobayashi, M., Takata, M., Choi, H., Shim, J. C., Kurino, H., & Koyanagi, M. (2004). Proposal of new nonvolatile memory with magnetic nano-dots. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 43(4 B), 2203-2206. https://doi.org/10.1143/JJAP.43.2203