Proposal of high current gain vibrating-body field-effect transistor

Shinji Ueki, Yuki Nishimori, Kazuhiro Miwa, Shinya Nakagawa, Hiroshi Imamoto, Tomohiro Kubota, Masakazu Sugiyama, Seiji Samukawa, Gen Hashiguchi

Research output: Contribution to journalArticlepeer-review


In this study, we propose a high current gain Vibrating-Body Field-Effect Transistor (Vertical VB-FET). The device has a specific structure in which drain, channel, and source electrodes of the FET are stacked. Since the current flow direction in the device is perpendicular to the wafer surface, the W/L c (W : channel width, Lc : channel length) value is increased and improved the properties of Vertical VB-FET. In order to evaluate the dynamic properties, we derived the Lagrange's function and the dissipation function from a resistance-capacitance ladder equivalent circuit. Using these functions, we calculated the transconductance and current gain for a ring structured VB-FET. As a result, the estimated transconductance of the Vertical VB-FET was 1.81 × 10-2 mS, whereas 1.78 × 10-4 mS for the conventional type VB-FET with the same structure dimensions. The current gain of the vertical VB-FET also increased 15 times as large as the conventional one.

Original languageEnglish
Pages (from-to)332-336
Number of pages5
JournalIEEJ Transactions on Sensors and Micromachines
Issue number11
Publication statusPublished - 2013


  • Mosfet
  • Ring oscillator
  • VB-FET

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering


Dive into the research topics of 'Proposal of high current gain vibrating-body field-effect transistor'. Together they form a unique fingerprint.

Cite this