Proposal of a new physical model for Ohmic contacts

Y. Takada, M. Muraguchi, T. Endoh, S. Nomura, K. Shiraishi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Ohmic contacts are crucial for both device applications and the study of fundamental physics. In this study, we propose a new physical model for Ohmic contacts based on the detailed considerations of a metal/semiconductor interface, such as charge neutrality level concept, with which it is possible to describe the real situation precisely. Our proposed model contains many defect energy levels that originate from vacancies and impurities located in the vicinity of the metal/semiconductor interface, within the energy range of the Schottky barrier height. Moreover, we calculate the currentvoltage characteristics based on our model. Our calculated results show that our model reveals linear Ohmic IV characteristics and dense defect energy level distribution in the energy range of the Schottky barrier height is crucial for obtaining Ohmic IV characteristics.

Original languageEnglish
Pages (from-to)2837-2840
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume42
Issue number10
DOIs
Publication statusPublished - 2010 Sep 1

Keywords

  • Ohmic contacts
  • Two-dimensional electron system

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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