Proposal and demonstration of a new spin-orbit torque induced switching device

S. Fukami, T. Anekawa, C. Zhang, H. Ohno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Magnetic tunnel junction (MTJ) devices with three-terminal cell structure are promising building blocks for ultralow-power and high-performance memories and integrated circuits due to their high-speed and high-reliability features [1]. The three-terminal devices with spin-orbit torque (SOT) switching were recently proposed and have intensively investigated for a couple of years [2-7]. The SOT devices proposed so far are divided by their structure into two types. Here we propose a new structure of SOT device that combines the advantages of the existing two structures and demonstrate its basic operation.

Original languageEnglish
Title of host publication2015 IEEE International Magnetics Conference, INTERMAG 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479973224
DOIs
Publication statusPublished - 2015 Jul 14
Event2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, China
Duration: 2015 May 112015 May 15

Publication series

Name2015 IEEE International Magnetics Conference, INTERMAG 2015

Other

Other2015 IEEE International Magnetics Conference, INTERMAG 2015
CountryChina
CityBeijing
Period15/5/1115/5/15

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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