Properties of transparent conductive ZnO: Al thin films prepared by magnetron sputtering

En Gang Fu, Da Ming Zhuang, Gong Zhang, Zhao Ming, Wei Fang Yang, Jia Jun Liu

Research output: Contribution to journalArticlepeer-review

77 Citations (Scopus)

Abstract

Middle-frequency alternative magnetron sputtering was used to deposit transparent conductive ZAO (ZnO:Al) thin films with ZAO (98 wt%ZnO + 2 wt%Al2O3) ceramic target on glass and Si wafers. The influences of the various deposition parameters on the structural, optical and electrical performances of ZAO films have been studied. The structural characteristics of the films were investigated by the X-ray diffractometer and atomic force microscope, while the visible transmittance, carrier concentration and Hall mobility were studied by UV-VIS and the Hall tester, respectively. The lowest resistivity obtained in the work was 4.6×10-4Ωcm for the film with average transmittance of 90.0% within the visible wavelength range and sheet resistance of 32Ω, which was deposited at 250 °C and 0.8 Pa.

Original languageEnglish
Pages (from-to)383-387
Number of pages5
JournalMicroelectronics Journal
Volume35
Issue number4
DOIs
Publication statusPublished - 2004 Apr

Keywords

  • Argon gas pressure
  • Resistivity
  • Sputtering
  • Substrate temperature
  • Transmittance
  • ZnO:Al thin films

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Properties of transparent conductive ZnO: Al thin films prepared by magnetron sputtering'. Together they form a unique fingerprint.

Cite this