Properties of TiO2-based transparent conducting oxide thin films on GaN(0001) surfaces

J. Kasai, T. Hitosugi, M. Moriyama, K. Goshonoo, N. L.H. Hoang, S. Nakao, N. Yamada, T. Hasegawa

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    33 Citations (Scopus)

    Abstract

    Anatase Nb-doped TiO2 transparent conducting oxide has been formed on GaN(0001) surfaces using a sputtering method. Amorphous films deposited at room temperature were annealed at a substrate temperature of 500 °C in vacuum to form single-phase anatase films. Films with a thickness of 170 nm exhibited a resistivity of 8× 10-4 Ωcm with absorptance less than 5% at a wavelength of 460 nm. Furthermore, the refractive index of the Nb-doped TiO2 was well matched to that of GaN. These findings indicate that Nb-doped TiO2 is a promising material for use as transparent electrodes in GaN-based light emitting diodes (LEDs), particularly since reflection at the electrode/GaN boundary can be suppressed, enhancing the external quantum efficiency of blue LEDs.

    Original languageEnglish
    Article number053110
    JournalJournal of Applied Physics
    Volume107
    Issue number5
    DOIs
    Publication statusPublished - 2010

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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  • Cite this

    Kasai, J., Hitosugi, T., Moriyama, M., Goshonoo, K., Hoang, N. L. H., Nakao, S., Yamada, N., & Hasegawa, T. (2010). Properties of TiO2-based transparent conducting oxide thin films on GaN(0001) surfaces. Journal of Applied Physics, 107(5), [053110]. https://doi.org/10.1063/1.3326943