Properties of TiO2-based transparent conducting oxide thin films on GaN(0001) surfaces

J. Kasai; T. Hitosugi; M. Moriyama; K. Goshonoo; N. L.H. Hoang; S. Nakao; N. Yamada; T. Hasegawa

doi:10.1063/1.3326943

Properties of TiO₂-based transparent conducting oxide thin films on GaN(0001) surfaces

J. Kasai, T. Hitosugi, M. Moriyama, K. Goshonoo, N. L.H. Hoang, S. Nakao, N. Yamada, T. Hasegawa

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

Anatase Nb-doped TiO₂ transparent conducting oxide has been formed on GaN(0001) surfaces using a sputtering method. Amorphous films deposited at room temperature were annealed at a substrate temperature of 500 °C in vacuum to form single-phase anatase films. Films with a thickness of 170 nm exhibited a resistivity of 8× 10^-4 Ωcm with absorptance less than 5% at a wavelength of 460 nm. Furthermore, the refractive index of the Nb-doped TiO₂ was well matched to that of GaN. These findings indicate that Nb-doped TiO₂ is a promising material for use as transparent electrodes in GaN-based light emitting diodes (LEDs), particularly since reflection at the electrode/GaN boundary can be suppressed, enhancing the external quantum efficiency of blue LEDs.

Original language	English
Article number	053110
Journal	Journal of Applied Physics
Volume	107
Issue number	5
DOIs	https://doi.org/10.1063/1.3326943
Publication status	Published - 2010

ASJC Scopus subject areas

Physics and Astronomy(all)

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@article{c0417413e1074bcd908a656e46aff35c,

title = "Properties of TiO2-based transparent conducting oxide thin films on GaN(0001) surfaces",

abstract = "Anatase Nb-doped TiO2 transparent conducting oxide has been formed on GaN(0001) surfaces using a sputtering method. Amorphous films deposited at room temperature were annealed at a substrate temperature of 500 °C in vacuum to form single-phase anatase films. Films with a thickness of 170 nm exhibited a resistivity of 8× 10-4 Ωcm with absorptance less than 5% at a wavelength of 460 nm. Furthermore, the refractive index of the Nb-doped TiO2 was well matched to that of GaN. These findings indicate that Nb-doped TiO2 is a promising material for use as transparent electrodes in GaN-based light emitting diodes (LEDs), particularly since reflection at the electrode/GaN boundary can be suppressed, enhancing the external quantum efficiency of blue LEDs.",

author = "J. Kasai and T. Hitosugi and M. Moriyama and K. Goshonoo and Hoang, {N. L.H.} and S. Nakao and N. Yamada and T. Hasegawa",

note = "Funding Information: This work was supported in part by the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan, Elements Science and Technology Project, and the New Energy and Industrial Technology Development Organization (NEDO). We thank Dr. Y. Hirose for fruitful discussions.",

year = "2010",

doi = "10.1063/1.3326943",

language = "English",

volume = "107",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Properties of TiO2-based transparent conducting oxide thin films on GaN(0001) surfaces

AU - Kasai, J.

AU - Hitosugi, T.

AU - Moriyama, M.

AU - Goshonoo, K.

AU - Hoang, N. L.H.

AU - Nakao, S.

AU - Yamada, N.

AU - Hasegawa, T.

N1 - Funding Information: This work was supported in part by the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan, Elements Science and Technology Project, and the New Energy and Industrial Technology Development Organization (NEDO). We thank Dr. Y. Hirose for fruitful discussions.

PY - 2010

Y1 - 2010

N2 - Anatase Nb-doped TiO2 transparent conducting oxide has been formed on GaN(0001) surfaces using a sputtering method. Amorphous films deposited at room temperature were annealed at a substrate temperature of 500 °C in vacuum to form single-phase anatase films. Films with a thickness of 170 nm exhibited a resistivity of 8× 10-4 Ωcm with absorptance less than 5% at a wavelength of 460 nm. Furthermore, the refractive index of the Nb-doped TiO2 was well matched to that of GaN. These findings indicate that Nb-doped TiO2 is a promising material for use as transparent electrodes in GaN-based light emitting diodes (LEDs), particularly since reflection at the electrode/GaN boundary can be suppressed, enhancing the external quantum efficiency of blue LEDs.

AB - Anatase Nb-doped TiO2 transparent conducting oxide has been formed on GaN(0001) surfaces using a sputtering method. Amorphous films deposited at room temperature were annealed at a substrate temperature of 500 °C in vacuum to form single-phase anatase films. Films with a thickness of 170 nm exhibited a resistivity of 8× 10-4 Ωcm with absorptance less than 5% at a wavelength of 460 nm. Furthermore, the refractive index of the Nb-doped TiO2 was well matched to that of GaN. These findings indicate that Nb-doped TiO2 is a promising material for use as transparent electrodes in GaN-based light emitting diodes (LEDs), particularly since reflection at the electrode/GaN boundary can be suppressed, enhancing the external quantum efficiency of blue LEDs.

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SN - 0021-8979

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ER -

Properties of TiO₂-based transparent conducting oxide thin films on GaN(0001) surfaces

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