Properties of TIC co-deposited with Ar gas

T. Shikama, M. Fukutomi, M. Fujitsuka, M. Okada

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Atoms constituting the first wall will be eroded off and then re-deposited on other portions of the wall through the plasma-wall interaction. The re-deposited film is considered to incorporate with many gaseous atoms and will evaporate and exfoliate easily during the operation thereafter, resulting in a deleterious contamination of fusion plasma. Here, we studied preliminarily the behavior of sputter-deposited TiC films which incorporated with inert Ar gas, at elevated temperatures. The film deposited with lower bias voltage contained fewer Ar atoms but was easy to evaporate and had weak adhesive strength to its substrate. The film deposited with higher bias voltage resisted to the thermal evaporation and had good adhesive strength but contained more Ar atoms. The incorporated Ar atoms formed blisters and caused the film exfoliation.

Original languageEnglish
Pages (from-to)1281-1285
Number of pages5
JournalJournal of Nuclear Materials
Volume123
Issue number1-3
DOIs
Publication statusPublished - 1984 May 2

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Materials Science(all)
  • Nuclear Energy and Engineering

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    Shikama, T., Fukutomi, M., Fujitsuka, M., & Okada, M. (1984). Properties of TIC co-deposited with Ar gas. Journal of Nuclear Materials, 123(1-3), 1281-1285. https://doi.org/10.1016/0022-3115(84)90255-1