Properties of the 3.4 eV luminescence band in GaN and its relation to stacking faults

B. J. Skromme, L. Chen, M. K. Mikhov, H. Yamane, M. Aoki, F. J. Disalvo

Research output: Contribution to journalConference articlepeer-review

16 Citations (Scopus)

Abstract

The properties and nature of a highly structured photoluminescence system observed at 1.7 K in high quality bulk GaN crystals grown from a Na/Ga flux are investigated. As many as eight distinct components are resolved in the range 3.28-3.435 eV, with full widths at half maxima as narrow as 2.3 meV. In some cases, the peaks shift up or down in energy by 20 meV or more as the excitation intensity is increased. The observations are explained in terms of single or multiple polytypic quantum wells involving 3C-GaN regions embedded in the 2H-GaN matrix. We attribute the peaks to recombination of spatially separated carriers in the presence of band bending, which can be partially flattened by photogenerated carriers. The built-in fields are related to polarization charge at the 3C/2H interfaces. These PL features vary from sample to sample (or within a sample).

Original languageEnglish
Pages (from-to)1613-1616
Number of pages4
JournalMaterials Science Forum
Volume457-460
Issue numberII
DOIs
Publication statusPublished - 2004
EventProceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 - Lyon, France
Duration: 2003 Oct 52003 Oct 10

Keywords

  • Bulk GaN
  • Cathodoluminescence
  • Excitation intensity dependence
  • Na/Ga flux
  • Photoluminescence
  • Polarity dependence
  • Polytypic quantum wells
  • Stacking faults

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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