Properties of sputtered full Heusler alloy Cr2MnSb and its application in a magnetic tunnel junction

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Abstract

We deposit 30 nm thick Cr2MnSb films on a MgO(0 0 1) substrate by magnetron sputtering. X-ray diffraction reveals that the annealing promotes the crystallization of Cr2MnSb from amorphous at as-deposited state to partially crystallized phase, and that the crystallinity improves by raising the annealing temperature. The crystallized phase exhibits full B2 and partial L21 ordering after the annealing above 300 °C. The magnetic and magneto-transport properties reveal that the annealed Cr2MnSb shows magnetic ordering up to ∼350 K with small magnetic moment, 0.3µ B/formula unit for the sample annealed at 300 °C. We adopt Cr2MnSb as one of the electrodes in magnetic tunnel junctions (MTJs), and observe the switching of junction resistance, when the magnetization direction is reversed by sweeping an external magnetic field.

Original languageEnglish
Article number495002
JournalJournal of Physics D: Applied Physics
Volume52
Issue number49
DOIs
Publication statusPublished - 2019 Sep 20

Keywords

  • CrMnSb
  • Heusler alloy
  • fully compensated ferrimagnet
  • magnetic tunnel junction
  • spin polarization

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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