Properties of sputter-deposited Ni-Mn-Ga thin films

V. A. Chernenko; S. Besseghini; M. Hagler; P. Müllner; M. Ohtsuka; F. Stortiero

doi:10.1016/j.msea.2006.12.206

Properties of sputter-deposited Ni-Mn-Ga thin films

V. A. Chernenko, S. Besseghini, M. Hagler, P. Müllner, M. Ohtsuka, F. Stortiero

Center for Mineral Processing and Metallurgy (CMPM)

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Sub-micrometer Ni-Mn-Ga films on MgO(0 0 1) single-crystalline wafers have been prepared by radio-frequency magnetron sputtering. The structural and magnetic states of the as-received (quasi-amorphous phase) and annealed (highly ordered martensitic phase at T = 300 K) films have been examined by X-ray diffraction, and measurements of resistivity and magnetization. The annealed films demonstrate a transformation behavior typical for the bulk and show a thickness dependence of the magnetic properties.

Original language	English
Pages (from-to)	271-274
Number of pages	4
Journal	Materials Science and Engineering A
Volume	481-482
Issue number	1-2 C
DOIs	https://doi.org/10.1016/j.msea.2006.12.206
Publication status	Published - 2008 May 25

Keywords

Magnetic anisotropy
Martensitic transformation
MgO(0 0 1) wafer
Ni-Mn-Ga thin film

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{08491dde4ec545d5a2c5f44c771bc1d1,

title = "Properties of sputter-deposited Ni-Mn-Ga thin films",

abstract = "Sub-micrometer Ni-Mn-Ga films on MgO(0 0 1) single-crystalline wafers have been prepared by radio-frequency magnetron sputtering. The structural and magnetic states of the as-received (quasi-amorphous phase) and annealed (highly ordered martensitic phase at T = 300 K) films have been examined by X-ray diffraction, and measurements of resistivity and magnetization. The annealed films demonstrate a transformation behavior typical for the bulk and show a thickness dependence of the magnetic properties.",

keywords = "Magnetic anisotropy, Martensitic transformation, MgO(0 0 1) wafer, Ni-Mn-Ga thin film",

author = "Chernenko, {V. A.} and S. Besseghini and M. Hagler and P. M{\"u}llner and M. Ohtsuka and F. Stortiero",

note = "Funding Information: VAC is grateful to Fondazione Cariplo for financial support (project 2004.1819-A10.9251) and to Boise State University, ID, USA for partial financial support and hospitality. The authors are grateful to M. Beiser for laser-cutting the specimens. Partial support through DARPA contract N660001-01-8034 is acknowledged. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2008",

month = may,

day = "25",

doi = "10.1016/j.msea.2006.12.206",

language = "English",

volume = "481-482",

pages = "271--274",

journal = "Materials Science & Engineering A: Structural Materials: Properties, Microstructure and Processing",

issn = "0921-5093",

publisher = "Elsevier BV",

number = "1-2 C",

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TY - JOUR

T1 - Properties of sputter-deposited Ni-Mn-Ga thin films

AU - Chernenko, V. A.

AU - Besseghini, S.

AU - Hagler, M.

AU - Müllner, P.

AU - Ohtsuka, M.

AU - Stortiero, F.

N1 - Funding Information: VAC is grateful to Fondazione Cariplo for financial support (project 2004.1819-A10.9251) and to Boise State University, ID, USA for partial financial support and hospitality. The authors are grateful to M. Beiser for laser-cutting the specimens. Partial support through DARPA contract N660001-01-8034 is acknowledged. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2008/5/25

Y1 - 2008/5/25

N2 - Sub-micrometer Ni-Mn-Ga films on MgO(0 0 1) single-crystalline wafers have been prepared by radio-frequency magnetron sputtering. The structural and magnetic states of the as-received (quasi-amorphous phase) and annealed (highly ordered martensitic phase at T = 300 K) films have been examined by X-ray diffraction, and measurements of resistivity and magnetization. The annealed films demonstrate a transformation behavior typical for the bulk and show a thickness dependence of the magnetic properties.

AB - Sub-micrometer Ni-Mn-Ga films on MgO(0 0 1) single-crystalline wafers have been prepared by radio-frequency magnetron sputtering. The structural and magnetic states of the as-received (quasi-amorphous phase) and annealed (highly ordered martensitic phase at T = 300 K) films have been examined by X-ray diffraction, and measurements of resistivity and magnetization. The annealed films demonstrate a transformation behavior typical for the bulk and show a thickness dependence of the magnetic properties.

KW - Magnetic anisotropy

KW - Martensitic transformation

KW - MgO(0 0 1) wafer

KW - Ni-Mn-Ga thin film

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U2 - 10.1016/j.msea.2006.12.206

DO - 10.1016/j.msea.2006.12.206

M3 - Article

AN - SCOPUS:41949088394

SN - 0921-5093

VL - 481-482

SP - 271

EP - 274

JO - Materials Science & Engineering A: Structural Materials: Properties, Microstructure and Processing

JF - Materials Science & Engineering A: Structural Materials: Properties, Microstructure and Processing

IS - 1-2 C

ER -

Properties of sputter-deposited Ni-Mn-Ga thin films

Abstract

Keywords

ASJC Scopus subject areas

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