Properties of polycrystalline BaTi2O5 substituted with MgO prepared by a floating zone method

Xin Yan Yue; Hong Qiang Ru; Rong Tu; Takashi Goto

doi:10.4028/www.scientific.net/AMR.311-313.1144

Properties of polycrystalline BaTi₂O₅ substituted with MgO prepared by a floating zone method

Xin Yan Yue, Hong Qiang Ru, Rong Tu, Takashi Goto

Materials Processing and Characterization Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

MgO substituted polycrystalline BaTi₂O₅ (BT ₂), Ba_1-xMg_xTi₂O₅ (BMT₂), was prepared by a floating zone method (FZ-melting). The dielectric property of BMT₂ was investigated by an AC impedance method. At x = 0.005 MgO, the permittivity (ε_r) showed the maximum value of 5800 for FZ-melted specimens. The Curie temperature (T _c) decreased with increasing x and the permittivity showed a flat peak at x ≥ 0.03. Second phases of BaTiO₃, Ba₆Ti ₁₇O₄₀ and Ba₄MgTi₁₁O₂₇ were identified in polycrystalline BMT_2. BaTiO₃ and Ba₆Ti₁₇O₄₀ could be due to the decomposition of BT₂ at high temperatures.

Original language	English
Title of host publication	Advanced Materials and Processes
Pages	1144-1147
Number of pages	4
DOIs	https://doi.org/10.4028/www.scientific.net/AMR.311-313.1144
Publication status	Published - 2011 Sep 26
Event	2011 International Conference on Advanced Design and Manufacturing Engineering, ADME 2011 - Guangzhou, China Duration: 2011 Sep 16 → 2011 Sep 18

Publication series

Name	Advanced Materials Research
Volume	311-313
ISSN (Print)	1022-6680

Other

Other	2011 International Conference on Advanced Design and Manufacturing Engineering, ADME 2011
Country	China
City	Guangzhou
Period	11/9/16 → 11/9/18

Keywords

BaTiO
Dielectric property
Floating zone method
MgO

ASJC Scopus subject areas

Engineering(all)

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Yue, X. Y., Ru, H. Q., Tu, R., & Goto, T. (2011). Properties of polycrystalline BaTi₂O₅ substituted with MgO prepared by a floating zone method. In Advanced Materials and Processes (pp. 1144-1147). (Advanced Materials Research; Vol. 311-313). https://doi.org/10.4028/www.scientific.net/AMR.311-313.1144

Yue, XY, Ru, HQ, Tu, R & Goto, T 2011, Properties of polycrystalline BaTi₂O₅ substituted with MgO prepared by a floating zone method. in Advanced Materials and Processes. Advanced Materials Research, vol. 311-313, pp. 1144-1147, 2011 International Conference on Advanced Design and Manufacturing Engineering, ADME 2011, Guangzhou, China, 11/9/16. https://doi.org/10.4028/www.scientific.net/AMR.311-313.1144

@inproceedings{f6718250dd064c5b9f6c5099b973b944,

title = "Properties of polycrystalline BaTi2O5 substituted with MgO prepared by a floating zone method",

abstract = "MgO substituted polycrystalline BaTi2O5 (BT 2), Ba1-xMgxTi2O5 (BMT2), was prepared by a floating zone method (FZ-melting). The dielectric property of BMT2 was investigated by an AC impedance method. At x = 0.005 MgO, the permittivity (εr) showed the maximum value of 5800 for FZ-melted specimens. The Curie temperature (T c) decreased with increasing x and the permittivity showed a flat peak at x ≥ 0.03. Second phases of BaTiO3, Ba6Ti 17O40 and Ba4MgTi11O27 were identified in polycrystalline BMT2. BaTiO3 and Ba6Ti17O40 could be due to the decomposition of BT2 at high temperatures.",

keywords = "BaTiO, Dielectric property, Floating zone method, MgO",

author = "Yue, {Xin Yan} and Ru, {Hong Qiang} and Rong Tu and Takashi Goto",

year = "2011",

month = sep,

day = "26",

doi = "10.4028/www.scientific.net/AMR.311-313.1144",

language = "English",

isbn = "9783037852149",

series = "Advanced Materials Research",

pages = "1144--1147",

booktitle = "Advanced Materials and Processes",

note = "2011 International Conference on Advanced Design and Manufacturing Engineering, ADME 2011 ; Conference date: 16-09-2011 Through 18-09-2011",

}

TY - GEN

T1 - Properties of polycrystalline BaTi2O5 substituted with MgO prepared by a floating zone method

AU - Yue, Xin Yan

AU - Ru, Hong Qiang

AU - Tu, Rong

AU - Goto, Takashi

PY - 2011/9/26

Y1 - 2011/9/26

N2 - MgO substituted polycrystalline BaTi2O5 (BT 2), Ba1-xMgxTi2O5 (BMT2), was prepared by a floating zone method (FZ-melting). The dielectric property of BMT2 was investigated by an AC impedance method. At x = 0.005 MgO, the permittivity (εr) showed the maximum value of 5800 for FZ-melted specimens. The Curie temperature (T c) decreased with increasing x and the permittivity showed a flat peak at x ≥ 0.03. Second phases of BaTiO3, Ba6Ti 17O40 and Ba4MgTi11O27 were identified in polycrystalline BMT2. BaTiO3 and Ba6Ti17O40 could be due to the decomposition of BT2 at high temperatures.

AB - MgO substituted polycrystalline BaTi2O5 (BT 2), Ba1-xMgxTi2O5 (BMT2), was prepared by a floating zone method (FZ-melting). The dielectric property of BMT2 was investigated by an AC impedance method. At x = 0.005 MgO, the permittivity (εr) showed the maximum value of 5800 for FZ-melted specimens. The Curie temperature (T c) decreased with increasing x and the permittivity showed a flat peak at x ≥ 0.03. Second phases of BaTiO3, Ba6Ti 17O40 and Ba4MgTi11O27 were identified in polycrystalline BMT2. BaTiO3 and Ba6Ti17O40 could be due to the decomposition of BT2 at high temperatures.

KW - BaTiO

KW - Dielectric property

KW - Floating zone method

KW - MgO

UR - http://www.scopus.com/inward/record.url?scp=80052973823&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80052973823&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/AMR.311-313.1144

DO - 10.4028/www.scientific.net/AMR.311-313.1144

M3 - Conference contribution

AN - SCOPUS:80052973823

SN - 9783037852149

T3 - Advanced Materials Research

SP - 1144

EP - 1147

BT - Advanced Materials and Processes

T2 - 2011 International Conference on Advanced Design and Manufacturing Engineering, ADME 2011

Y2 - 16 September 2011 through 18 September 2011

ER -