TY - JOUR
T1 - Properties of LiNbOs3 thin film deposited by chemical vapor deposition and frequency characteristics of film bulk acoustic wave resonator
AU - Kadota, Michio
AU - Suzuki, Yusuke
AU - Ito, Yoshihiro
PY - 2011/7/1
Y1 - 2011/7/1
N2 - We have realized the fabrication of a film bulk acoustic wave resonator (FBAR) using a thin LiNbOs film deposited by chemical vapor deposition (CVD) for the first time. As a result, a 2.9 GHz FBAR with an impedance ratio of 40 dB at resonant (fr) and antiresonant (fa) frequencies was realized. The LiNbO3 film has a mixed polarity. As a result of scanning nonlinear dielectric microscopy (SNDM), -c domains and +c domains occupy 82 and 18% of the LiNbO3 film, respectively. A shear mode was not excited on the fabricated FABR. According to a calculation, it is found that the shear wave mode can be suppressed by selecting the thickness of electrodes without any changes in the main responses of the longitudinal mode wave. It is important to deposit another oriented LiNbO3 film with a larger coupling factor to realize a wider-band device.
AB - We have realized the fabrication of a film bulk acoustic wave resonator (FBAR) using a thin LiNbOs film deposited by chemical vapor deposition (CVD) for the first time. As a result, a 2.9 GHz FBAR with an impedance ratio of 40 dB at resonant (fr) and antiresonant (fa) frequencies was realized. The LiNbO3 film has a mixed polarity. As a result of scanning nonlinear dielectric microscopy (SNDM), -c domains and +c domains occupy 82 and 18% of the LiNbO3 film, respectively. A shear mode was not excited on the fabricated FABR. According to a calculation, it is found that the shear wave mode can be suppressed by selecting the thickness of electrodes without any changes in the main responses of the longitudinal mode wave. It is important to deposit another oriented LiNbO3 film with a larger coupling factor to realize a wider-band device.
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U2 - 10.1143/JJAP.50.07HD10
DO - 10.1143/JJAP.50.07HD10
M3 - Article
AN - SCOPUS:79960585311
VL - 50
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 7 PART 2
M1 - 07HD10
ER -