Properties of hydrogenated amorphous germanium nitrogen alloys prepared by reactive sputtering

I. Honma, H. Kawai, H. Komiyama, K. Tanaka

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18 Citations (Scopus)

Abstract

Hydrogenated amorphous germanium-nitrogen alloys (a-GeNx:H) were synthesized as a new group of amorphous semiconductors by rf(13.56 MHz) reactive sputtering of a Ge target in a gas mixture of Ar+N2+H 2 under a variety of deposition conditions such as gas ratio, rf-discharge power, and substrate temperature. Structural, optical, and electrical properties of those a-GeNx:H alloys were systematically measured and are discussed in relation to their preparation conditions. The optical band gap E04 of a-GeNx:H alloys could be continuously controlled in the range from 1.1 eV to 3.3 eV primarily depending on the atomic N/Ge ratio in the film. The role of hydrogen and nitrogen in the optical and electrical properties of the material is also crucially demonstrated.

Original languageEnglish
Pages (from-to)1074-1082
Number of pages9
JournalJournal of Applied Physics
Volume65
Issue number3
DOIs
Publication statusPublished - 1989 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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