Abstract
Hydrogenated amorphous germanium-nitrogen alloys (a-GeNx:H) were synthesized as a new group of amorphous semiconductors by rf(13.56 MHz) reactive sputtering of a Ge target in a gas mixture of Ar+N2+H 2 under a variety of deposition conditions such as gas ratio, rf-discharge power, and substrate temperature. Structural, optical, and electrical properties of those a-GeNx:H alloys were systematically measured and are discussed in relation to their preparation conditions. The optical band gap E04 of a-GeNx:H alloys could be continuously controlled in the range from 1.1 eV to 3.3 eV primarily depending on the atomic N/Ge ratio in the film. The role of hydrogen and nitrogen in the optical and electrical properties of the material is also crucially demonstrated.
Original language | English |
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Pages (from-to) | 1074-1082 |
Number of pages | 9 |
Journal | Journal of Applied Physics |
Volume | 65 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1989 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)