Properties of high resistivity CoPdAlO film for possibility of application to RF integrated inductor

Taek Soo Kim; Kenkichi Suezawa; Masahiro Yamaguchi; Ken Ichi Arai; Yutaka Shimada; Chong Oh Kim

doi:10.1109/20.951140

Properties of high resistivity CoPdAlO film for possibility of application to RF integrated inductor

Taek Soo Kim, Kenkichi Suezawa, Masahiro Yamaguchi, Ken Ichi Arai, Yutaka Shimada, Chong Oh Kim

ENG - Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

16 Citations (Scopus)

Abstract

Presently, an inductor adapted at MMIC (Monolithic Microwave integrated Circuit) which is used for cellular phone or PHS operates at quasimicrowave range over 800 MHz. However, a W-CDMA (Wideband Code Division Multiple Access) will use about 2 GHz range. Therefore magnetic film devices should be compatible up to 2 GHz. We deposited Co-Pd-Al-O system film using rf sputtering method which is expected for operating at 2 GHz, and investigated the effect of Pd content and magnetic field annealing. When Pd composition is 19%, H_k was 118 Oe, and showed flat frequency characteristics until 1.5 GHz. The Q factor (=μ′/μ″) was 23.3 at 1 GHz, 6.7 at 1.5 GHz and 1.5 at 2 GHz, respectively. Resonance frequency was 2.9 GHz. Therefore Co-Pd-Al-O thin film could be used at over 1 GHz, and also expected as an inductor material for next generation MMIC.

Original language	English
Pages (from-to)	2255-2257
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	37
Issue number	4 I
DOIs	https://doi.org/10.1109/20.951140
Publication status	Published - 2001 Jul
Event	8th Joint Magnetism and Magnetic Materials -International Magnetic Conference- (MMM-Intermag) - San Antonio, TX, United States Duration: 2001 Jan 7 → 2001 Jan 11

Keywords

Complex permeability
Ferromagnetic resonance
Granular film
MMIC

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Properties of high resistivity CoPdAlO film for possibility of application to RF integrated inductor",

abstract = "Presently, an inductor adapted at MMIC (Monolithic Microwave integrated Circuit) which is used for cellular phone or PHS operates at quasimicrowave range over 800 MHz. However, a W-CDMA (Wideband Code Division Multiple Access) will use about 2 GHz range. Therefore magnetic film devices should be compatible up to 2 GHz. We deposited Co-Pd-Al-O system film using rf sputtering method which is expected for operating at 2 GHz, and investigated the effect of Pd content and magnetic field annealing. When Pd composition is 19%, Hk was 118 Oe, and showed flat frequency characteristics until 1.5 GHz. The Q factor (=μ′/μ″) was 23.3 at 1 GHz, 6.7 at 1.5 GHz and 1.5 at 2 GHz, respectively. Resonance frequency was 2.9 GHz. Therefore Co-Pd-Al-O thin film could be used at over 1 GHz, and also expected as an inductor material for next generation MMIC.",

keywords = "Complex permeability, Ferromagnetic resonance, Granular film, MMIC",

author = "Kim, {Taek Soo} and Kenkichi Suezawa and Masahiro Yamaguchi and Arai, {Ken Ichi} and Yutaka Shimada and Kim, {Chong Oh}",

year = "2001",

month = jul,

doi = "10.1109/20.951140",

language = "English",

volume = "37",

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journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Properties of high resistivity CoPdAlO film for possibility of application to RF integrated inductor

AU - Kim, Taek Soo

AU - Suezawa, Kenkichi

AU - Yamaguchi, Masahiro

AU - Arai, Ken Ichi

AU - Shimada, Yutaka

AU - Kim, Chong Oh

PY - 2001/7

Y1 - 2001/7

N2 - Presently, an inductor adapted at MMIC (Monolithic Microwave integrated Circuit) which is used for cellular phone or PHS operates at quasimicrowave range over 800 MHz. However, a W-CDMA (Wideband Code Division Multiple Access) will use about 2 GHz range. Therefore magnetic film devices should be compatible up to 2 GHz. We deposited Co-Pd-Al-O system film using rf sputtering method which is expected for operating at 2 GHz, and investigated the effect of Pd content and magnetic field annealing. When Pd composition is 19%, Hk was 118 Oe, and showed flat frequency characteristics until 1.5 GHz. The Q factor (=μ′/μ″) was 23.3 at 1 GHz, 6.7 at 1.5 GHz and 1.5 at 2 GHz, respectively. Resonance frequency was 2.9 GHz. Therefore Co-Pd-Al-O thin film could be used at over 1 GHz, and also expected as an inductor material for next generation MMIC.

AB - Presently, an inductor adapted at MMIC (Monolithic Microwave integrated Circuit) which is used for cellular phone or PHS operates at quasimicrowave range over 800 MHz. However, a W-CDMA (Wideband Code Division Multiple Access) will use about 2 GHz range. Therefore magnetic film devices should be compatible up to 2 GHz. We deposited Co-Pd-Al-O system film using rf sputtering method which is expected for operating at 2 GHz, and investigated the effect of Pd content and magnetic field annealing. When Pd composition is 19%, Hk was 118 Oe, and showed flat frequency characteristics until 1.5 GHz. The Q factor (=μ′/μ″) was 23.3 at 1 GHz, 6.7 at 1.5 GHz and 1.5 at 2 GHz, respectively. Resonance frequency was 2.9 GHz. Therefore Co-Pd-Al-O thin film could be used at over 1 GHz, and also expected as an inductor material for next generation MMIC.

KW - Complex permeability

KW - Ferromagnetic resonance

KW - Granular film

KW - MMIC

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Y2 - 7 January 2001 through 11 January 2001

ER -

Properties of high resistivity CoPdAlO film for possibility of application to RF integrated inductor

Abstract

Keywords

ASJC Scopus subject areas

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