Properties of Ga1-xMnxAs with high x (>0.1)

D. Chiba, K. M. Yu, W. Walukiewicz, Y. Nishitani, F. Matsukura, H. Ohno

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

We have investigated the magnetic and the crystalline properties of a set of Ga1-x Mnx As layers with high nominal Mn compositions (x=0.101-0.198). Magnetization measurements and combined channeling Rutherford backscattering (c-RBS) and particle induced x-ray emission (c-PIXE) measurements have been performed to determine the effective Mn composition xeff and the fraction of Mn atoms at various lattice sites. Here, xeff determined from magnetization measurements, which increases with increasing x, is consistent with the results determined from c-RBS-PIXE measurements.

Original languageEnglish
Article number07D136
JournalJournal of Applied Physics
Volume103
Issue number7
DOIs
Publication statusPublished - 2008

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint

Dive into the research topics of 'Properties of Ga<sub>1-x</sub>Mn<sub>x</sub>As with high x (>0.1)'. Together they form a unique fingerprint.

Cite this