Properties of interstitial chromium (Cri) in hydogenated p-type Si crystals were studied by means of an EPR method. Specimens were prepared from a floating-zone grown p-type Si crystal. They were doped with Cr by high temperature annealing in Cr vapor, followed by quenching. Then, they were doped with hydrogen (H) by annealing in H2 gas followed by quenching. We measured their EPR spectra to determine the concentrations of Cri and CrB pair. The intensity of EPR spectrum due to Cri in hydrogenated Si was about one-tenth of that without H when they were doped at 1250°C. The heat of the solution of Cr in hydrogenated Si was determined to be about 1.9 eV which is much smaller than that (2.9 eV) without H doping. The migration energy of Cri in H-doped Si was determined to be 0.70±0.09 eV, which is smaller than that (about 1 eV) without H. Site change from interstitial to substitutional was observed in the specimen co-doped with Cr and Cu.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering