Properties of Ballistic current in MOSFETs studied by RT model

Yasuhiro Morozumi; Kuniyuki Kakushima; Parhat Ahmet; Kazuo Tsutsui; Nobuyuki Sugii; Takeo Hattori; Kenji Natori; Hiroshi Iwai

Properties of Ballistic current in MOSFETs studied by RT model

Yasuhiro Morozumi, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Kenji Natori, Hiroshi Iwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

How to increase the Ballistic conductivity is an important issue in the nano-scaled MOSFET. In this paper, we employed R-T model to investigate the optimum conditions for higher ballistic conductivity in MOSFET. It was found that a non-doped channel and a drain with a doping concentration less than 10²⁰[cm^-3] are essential for obtaining higher ballistic current in the MOSFET with a gate length of 10[nm].

Original language	English
Title of host publication	Semiconductor Technology, ISTC 2008 - Proceedings of the 7th International Conference on Semiconductor Technology
Pages	129-132
Number of pages	4
Publication status	Published - 2008
Externally published	Yes
Event	7th International Conference on Semiconductor Technology, ISTC 2008 - Shanghai, China Duration: 2008 Mar 15 → 2008 Mar 17

Publication series

Name	Proceedings - Electrochemical Society
Volume	PV 2008-1

Other

Other	7th International Conference on Semiconductor Technology, ISTC 2008
Country	China
City	Shanghai
Period	08/3/15 → 08/3/17

Keywords

Back scattering
Ballistic
RT model
Transport

ASJC Scopus subject areas

Electrochemistry

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Properties of Ballistic current in MOSFETs studied by RT model. / Morozumi, Yasuhiro; Kakushima, Kuniyuki; Ahmet, Parhat; Tsutsui, Kazuo; Sugii, Nobuyuki; Hattori, Takeo; Natori, Kenji; Iwai, Hiroshi.

Semiconductor Technology, ISTC 2008 - Proceedings of the 7th International Conference on Semiconductor Technology. 2008. p. 129-132 (Proceedings - Electrochemical Society; Vol. PV 2008-1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Morozumi, Y, Kakushima, K, Ahmet, P, Tsutsui, K, Sugii, N, Hattori, T, Natori, K & Iwai, H 2008, Properties of Ballistic current in MOSFETs studied by RT model. in Semiconductor Technology, ISTC 2008 - Proceedings of the 7th International Conference on Semiconductor Technology. Proceedings - Electrochemical Society, vol. PV 2008-1, pp. 129-132, 7th International Conference on Semiconductor Technology, ISTC 2008, Shanghai, China, 08/3/15.

Morozumi, Yasuhiro ; Kakushima, Kuniyuki ; Ahmet, Parhat ; Tsutsui, Kazuo ; Sugii, Nobuyuki ; Hattori, Takeo ; Natori, Kenji ; Iwai, Hiroshi. / Properties of Ballistic current in MOSFETs studied by RT model. Semiconductor Technology, ISTC 2008 - Proceedings of the 7th International Conference on Semiconductor Technology. 2008. pp. 129-132 (Proceedings - Electrochemical Society).

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AU - Sugii, Nobuyuki

AU - Hattori, Takeo

AU - Natori, Kenji

AU - Iwai, Hiroshi

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