@inproceedings{8b648f461eaa455d8576112baa205251,
title = "Properties of Ballistic current in MOSFETs studied by RT model",
abstract = "How to increase the Ballistic conductivity is an important issue in the nano-scaled MOSFET. In this paper, we employed R-T model to investigate the optimum conditions for higher ballistic conductivity in MOSFET. It was found that a non-doped channel and a drain with a doping concentration less than 1020[cm-3] are essential for obtaining higher ballistic current in the MOSFET with a gate length of 10[nm].",
keywords = "Back scattering, Ballistic, RT model, Transport",
author = "Yasuhiro Morozumi and Kuniyuki Kakushima and Parhat Ahmet and Kazuo Tsutsui and Nobuyuki Sugii and Takeo Hattori and Kenji Natori and Hiroshi Iwai",
year = "2008",
language = "English",
isbn = "9789881740816",
series = "Proceedings - Electrochemical Society",
pages = "129--132",
booktitle = "Semiconductor Technology, ISTC 2008 - Proceedings of the 7th International Conference on Semiconductor Technology",
note = "7th International Conference on Semiconductor Technology, ISTC 2008 ; Conference date: 15-03-2008 Through 17-03-2008",
}