Properties of Al doped zinc oxide films prepared by electron beam-PVD

Norio Yamaguchi, Tomohiro Kuroyama, Yoshiki Okuhara, Hideaki Matsubara

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Al doped ZnO (AZO) films were prepared on quartz substrates by the co-evaporation of ZnO and Al2O3 by EB-PVD. Structural, optical and electrical properties of AZO films were investigated, focusing on the effect of the electron beam power applied to the Al2O3 ingot. X-ray diffraction measurement showed that the AZO films were highly c-axis oriented. Transmittance of all the AZO films was over 85% in the visible range. The highest reflectance in the near IR range was obtained at the EB power on Al2O3 of 7.5 kW, 73% at 2500 nm. The lowest resistivity of 2.34 × 10-4 Ωcm was obtained for the film deposited with the EB power on Al2O3 of 7.5kW.

Original languageEnglish
Pages (from-to)981-983
Number of pages3
JournalJournal of the Ceramic Society of Japan
Issue number1420
Publication statusPublished - 2013 Dec


  • Al-doped ZnO
  • EB-PVD
  • Near-IR reflective
  • Transparent conductive oxides

ASJC Scopus subject areas

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry


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