Properties of Al doped zinc oxide films prepared by electron beam-PVD

N. Yamaguchi, T. Kuroyama, Y. Okuhara, H. Matsubara

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

Al doped ZnO (AZO) films were prepared on quartz substrates by the co-evaporation of ZnO and Al2O3 ingots by EB-PVD. EB power applied to the Al2O3 source was ranged from 3kW to 10kW, while EB power to the ZnO source was fixed at 3kW, at a substrate temperature of 400°C. X-ray diffraction measurement showed that the AZO films were weakly c-axis oriented. Transmittance of All the AZO films was over 80% in the visible range. Highest reflectance in the near IR range was obtained at the EB power on Al2O3 of 5kW. The lowest resistivity of 3.05 × 10-4 Ωcm was obtained for the film deposited with the EB power on Al2O3 of 5kW with the deposition time of 300s.

Original languageEnglish
Article number092025
JournalIOP Conference Series: Materials Science and Engineering
Volume18
Issue numberSYMPOSIUM 6
DOIs
Publication statusPublished - 2011 Jan 1
Event3rd International Congress on Ceramics, ICC 2011 - Osaka, Japan
Duration: 2010 Nov 142010 Nov 18

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)

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