Properties of Al doped zinc oxide films prepared by electron beam-PVD

N. Yamaguchi; T. Kuroyama; Y. Okuhara; H. Matsubara

doi:10.1088/1757-899X/18/9/092025

Properties of Al doped zinc oxide films prepared by electron beam-PVD

N. Yamaguchi, T. Kuroyama, Y. Okuhara, H. Matsubara

ENV - Environmental Studies for Advanced Society

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

Al doped ZnO (AZO) films were prepared on quartz substrates by the co-evaporation of ZnO and Al2O3 ingots by EB-PVD. EB power applied to the Al2O3 source was ranged from 3kW to 10kW, while EB power to the ZnO source was fixed at 3kW, at a substrate temperature of 400°C. X-ray diffraction measurement showed that the AZO films were weakly c-axis oriented. Transmittance of All the AZO films was over 80% in the visible range. Highest reflectance in the near IR range was obtained at the EB power on Al2O3 of 5kW. The lowest resistivity of 3.05 × 10^-4 Ωcm was obtained for the film deposited with the EB power on Al2O3 of 5kW with the deposition time of 300s.

Original language	English
Article number	092025
Journal	IOP Conference Series: Materials Science and Engineering
Volume	18
Issue number	SYMPOSIUM 6
DOIs	https://doi.org/10.1088/1757-899X/18/9/092025
Publication status	Published - 2011 Jan 1
Event	3rd International Congress on Ceramics, ICC 2011 - Osaka, Japan Duration: 2010 Nov 14 → 2010 Nov 18

ASJC Scopus subject areas

Materials Science(all)
Engineering(all)

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title = "Properties of Al doped zinc oxide films prepared by electron beam-PVD",

abstract = "Al doped ZnO (AZO) films were prepared on quartz substrates by the co-evaporation of ZnO and Al2O3 ingots by EB-PVD. EB power applied to the Al2O3 source was ranged from 3kW to 10kW, while EB power to the ZnO source was fixed at 3kW, at a substrate temperature of 400°C. X-ray diffraction measurement showed that the AZO films were weakly c-axis oriented. Transmittance of All the AZO films was over 80% in the visible range. Highest reflectance in the near IR range was obtained at the EB power on Al2O3 of 5kW. The lowest resistivity of 3.05 × 10-4 Ωcm was obtained for the film deposited with the EB power on Al2O3 of 5kW with the deposition time of 300s.",

author = "N. Yamaguchi and T. Kuroyama and Y. Okuhara and H. Matsubara",

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AU - Yamaguchi, N.

AU - Kuroyama, T.

AU - Okuhara, Y.

AU - Matsubara, H.

PY - 2011/1/1

Y1 - 2011/1/1

N2 - Al doped ZnO (AZO) films were prepared on quartz substrates by the co-evaporation of ZnO and Al2O3 ingots by EB-PVD. EB power applied to the Al2O3 source was ranged from 3kW to 10kW, while EB power to the ZnO source was fixed at 3kW, at a substrate temperature of 400°C. X-ray diffraction measurement showed that the AZO films were weakly c-axis oriented. Transmittance of All the AZO films was over 80% in the visible range. Highest reflectance in the near IR range was obtained at the EB power on Al2O3 of 5kW. The lowest resistivity of 3.05 × 10-4 Ωcm was obtained for the film deposited with the EB power on Al2O3 of 5kW with the deposition time of 300s.

AB - Al doped ZnO (AZO) films were prepared on quartz substrates by the co-evaporation of ZnO and Al2O3 ingots by EB-PVD. EB power applied to the Al2O3 source was ranged from 3kW to 10kW, while EB power to the ZnO source was fixed at 3kW, at a substrate temperature of 400°C. X-ray diffraction measurement showed that the AZO films were weakly c-axis oriented. Transmittance of All the AZO films was over 80% in the visible range. Highest reflectance in the near IR range was obtained at the EB power on Al2O3 of 5kW. The lowest resistivity of 3.05 × 10-4 Ωcm was obtained for the film deposited with the EB power on Al2O3 of 5kW with the deposition time of 300s.

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