TY - JOUR
T1 - Properties of a field emission lighting device employing high crystallized single-wall carbon nanotubes
AU - Shimoi, Norihiro
AU - Hojo, Toshimasa
AU - Adriana, Ledezma Estrada
AU - Garrido, Sharon Marie
AU - Tanaka, Yasumitsu
AU - Tohji, Kazuyuki
PY - 2013/6
Y1 - 2013/6
N2 - We developed a new cathode for a visible ray flat plane-emission device formed from a mixture of high crystallized single-wall carbon nanotubes (SWNTs) dispersed into an organic In2O3-SnO2 solution. A thin film cathode was fabricated by a simple coating process of the mixture onto a substrate. The turn-on field of a diode using the cathode was 1.2 V/μm and the brightness homogeneity in that plane was within 5 %. The brightness fluctuation from the lighting device could be reduced to within 1 % by employing high crystallized SWNTs. Furthermore, brightness efficiency, which is an important factor in comparing luminance devices, achieved more than 50 lm / W. This flat plane-emission device has the potential to provide a new approach to lighting in our life style and it also contributes to energy-saving through its low power consumption.
AB - We developed a new cathode for a visible ray flat plane-emission device formed from a mixture of high crystallized single-wall carbon nanotubes (SWNTs) dispersed into an organic In2O3-SnO2 solution. A thin film cathode was fabricated by a simple coating process of the mixture onto a substrate. The turn-on field of a diode using the cathode was 1.2 V/μm and the brightness homogeneity in that plane was within 5 %. The brightness fluctuation from the lighting device could be reduced to within 1 % by employing high crystallized SWNTs. Furthermore, brightness efficiency, which is an important factor in comparing luminance devices, achieved more than 50 lm / W. This flat plane-emission device has the potential to provide a new approach to lighting in our life style and it also contributes to energy-saving through its low power consumption.
KW - field emission
KW - flat plane-emission device
KW - high crystallized SWNTs
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U2 - 10.1002/j.2168-0159.2013.tb06319.x
DO - 10.1002/j.2168-0159.2013.tb06319.x
M3 - Article
AN - SCOPUS:84905279342
VL - 44
SP - 737
EP - 740
JO - Digest of Technical Papers - SID International Symposium
JF - Digest of Technical Papers - SID International Symposium
SN - 0097-966X
IS - 1
ER -