Propagation characteristics of Si nitride optical waveguide integrated with Si p-i-n diodes for light emitter and detector

A. Yamada, M. Sakuraba, Junichi Murota, K. Wada, L. C. Kimerling

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

For light propagation in Si nitride optical waveguides with various width, bending loss is evaluated, and the bending radius dependence is clarified using a pair of Si p-i-n diodes integrated on Si substrate.

Original languageEnglish
Title of host publication2004 1st IEEE International Conference on Group IV Photonics
Pages142-144
Number of pages3
Publication statusPublished - 2004 Dec 1
Event2004 1st IEEE International Conference on Group IV Photonics - Hong Kong, China, Hong Kong
Duration: 2004 Sep 292004 Oct 1

Other

Other2004 1st IEEE International Conference on Group IV Photonics
CountryHong Kong
CityHong Kong, China
Period04/9/2904/10/1

ASJC Scopus subject areas

  • Engineering(all)

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