Promoting emitter diffusion process and optimization of vertical profiles for high-speed SiGe HBT/BiCMOS

Makoto Miura; Hiromi Shimamoto; Reiko Hayami; Akihiro Kodama; Tatsuya Tominari; Takashi Hashimoto; Katsuyoshi Washio

doi:10.1109/TED.2006.871169

Promoting emitter diffusion process and optimization of vertical profiles for high-speed SiGe HBT/BiCMOS

Makoto Miura, Hiromi Shimamoto, Reiko Hayami, Akihiro Kodama, Tatsuya Tominari, Takashi Hashimoto, Katsuyoshi Washio

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

A high-temperature anneal-resistant process, which enables high-speed SiGe HBTs to embed scaled CMOS, is optimized in SiGe BiCMOS technology. This process, called promoting emitter diffusion (PED), is based on enhanced phosphorous diffusion from poly-Si emitter electrodes at high temperature to fabricate thin base layers and shorten the base transit time. By investigating the dependence of high-frequency performance on diffusion temperature, as-grown base layer thickness, and Si cap thickness, the methodology for PED optimization was yielded. In addition, this PED process is effective in reducing an extrinsic base resistance due to deep boron diffusion from poly-Si base electrodes. This indicates that the PED process is very effective at improving the tradeoff relationship between cutoff frequency f_T and maximum oscillation frequency f_max in self-aligned SiGe HBTs using selective epitaxial growth. As a consequence, both f_T and f_max of more than 200 GHz were successfully obtained.

Original language	English
Pages (from-to)	857-865
Number of pages	9
Journal	IEEE Transactions on Electron Devices
Volume	53
Issue number	4
DOIs	https://doi.org/10.1109/TED.2006.871169
Publication status	Published - 2006 Apr
Externally published	Yes

Keywords

Annealing
Communication systems
Diffusion processes
Epitaxial growth
Heterojunction bipolar transistors (HBTs)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2006.871169

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title = "Promoting emitter diffusion process and optimization of vertical profiles for high-speed SiGe HBT/BiCMOS",

abstract = "A high-temperature anneal-resistant process, which enables high-speed SiGe HBTs to embed scaled CMOS, is optimized in SiGe BiCMOS technology. This process, called promoting emitter diffusion (PED), is based on enhanced phosphorous diffusion from poly-Si emitter electrodes at high temperature to fabricate thin base layers and shorten the base transit time. By investigating the dependence of high-frequency performance on diffusion temperature, as-grown base layer thickness, and Si cap thickness, the methodology for PED optimization was yielded. In addition, this PED process is effective in reducing an extrinsic base resistance due to deep boron diffusion from poly-Si base electrodes. This indicates that the PED process is very effective at improving the tradeoff relationship between cutoff frequency fT and maximum oscillation frequency fmax in self-aligned SiGe HBTs using selective epitaxial growth. As a consequence, both fT and fmax of more than 200 GHz were successfully obtained.",

keywords = "Annealing, Communication systems, Diffusion processes, Epitaxial growth, Heterojunction bipolar transistors (HBTs)",

author = "Makoto Miura and Hiromi Shimamoto and Reiko Hayami and Akihiro Kodama and Tatsuya Tominari and Takashi Hashimoto and Katsuyoshi Washio",

year = "2006",

month = apr,

doi = "10.1109/TED.2006.871169",

language = "English",

volume = "53",

pages = "857--865",

journal = "IEEE Transactions on Electron Devices",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Promoting emitter diffusion process and optimization of vertical profiles for high-speed SiGe HBT/BiCMOS

AU - Miura, Makoto

AU - Shimamoto, Hiromi

AU - Hayami, Reiko

AU - Kodama, Akihiro

AU - Tominari, Tatsuya

AU - Hashimoto, Takashi

AU - Washio, Katsuyoshi

PY - 2006/4

Y1 - 2006/4

N2 - A high-temperature anneal-resistant process, which enables high-speed SiGe HBTs to embed scaled CMOS, is optimized in SiGe BiCMOS technology. This process, called promoting emitter diffusion (PED), is based on enhanced phosphorous diffusion from poly-Si emitter electrodes at high temperature to fabricate thin base layers and shorten the base transit time. By investigating the dependence of high-frequency performance on diffusion temperature, as-grown base layer thickness, and Si cap thickness, the methodology for PED optimization was yielded. In addition, this PED process is effective in reducing an extrinsic base resistance due to deep boron diffusion from poly-Si base electrodes. This indicates that the PED process is very effective at improving the tradeoff relationship between cutoff frequency fT and maximum oscillation frequency fmax in self-aligned SiGe HBTs using selective epitaxial growth. As a consequence, both fT and fmax of more than 200 GHz were successfully obtained.

AB - A high-temperature anneal-resistant process, which enables high-speed SiGe HBTs to embed scaled CMOS, is optimized in SiGe BiCMOS technology. This process, called promoting emitter diffusion (PED), is based on enhanced phosphorous diffusion from poly-Si emitter electrodes at high temperature to fabricate thin base layers and shorten the base transit time. By investigating the dependence of high-frequency performance on diffusion temperature, as-grown base layer thickness, and Si cap thickness, the methodology for PED optimization was yielded. In addition, this PED process is effective in reducing an extrinsic base resistance due to deep boron diffusion from poly-Si base electrodes. This indicates that the PED process is very effective at improving the tradeoff relationship between cutoff frequency fT and maximum oscillation frequency fmax in self-aligned SiGe HBTs using selective epitaxial growth. As a consequence, both fT and fmax of more than 200 GHz were successfully obtained.

KW - Annealing

KW - Communication systems

KW - Diffusion processes

KW - Epitaxial growth

KW - Heterojunction bipolar transistors (HBTs)

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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ER -

Promoting emitter diffusion process and optimization of vertical profiles for high-speed SiGe HBT/BiCMOS

Abstract

Keywords

ASJC Scopus subject areas

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