Promising characteristics of GaN layers grown on amorphous silica substrates by gas-source MBE

K. Iwata, H. Asahi, K. Asami, A. Ishida, R. Kuroiwa, H. Tampo, S. Gonda, S. Chichibu

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

Polycrystalline GaN layers are grown on amorphous fused silica glass substrates by gas-source MBE using ion removed electron cyclotron resonance (ECR) radical cell. Polycrystalline GaN grown here shows a strong photoluminescence without deep-level emission. The emission peak with a wide spectral half-width is red-shifted from the excitonic emission of a GaN layer grown on a sapphire substrate. The peak is excitonic from the excitation power and temperature dependencies of the PL spectrum. Photoluminescence excitation spectra show that the polycrystalline GaN has a large Stokes shift. The results suggest that the polycrystalline GaN has a large potential fluctuation due to a grain to grain potential distribution and that the strong emission originates from the lower-energy tail of the absorption spectrum. Such optical properties indicate that the polycrystalline GaN layers grown on the glass substrates are promising to fabricate large area and low cost light-emitting devices and solar cells. Polycrystalline optical device technology will be indispensable for industrial applications as well as the polycrystalline and the amorphous Si devices.

Original languageEnglish
Pages (from-to)218-222
Number of pages5
JournalJournal of Crystal Growth
Volume189-190
DOIs
Publication statusPublished - 1998 Jun 15
Externally publishedYes

Keywords

  • GaN
  • Gas source MBE
  • Glass substrate
  • PL
  • PLE
  • Polycrystal
  • Stokes shift

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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