TY - JOUR
T1 - Progress in performance enhancement methods for capacitive silicon resonators
AU - Van Toan, Nguyen
AU - Ono, Takahito
PY - 2017/11
Y1 - 2017/11
N2 - In this paper, we review the progress in recent studies on the performance enhancement methods for capacitive silicon resonators. We provide information on various fabrication technologies and design considerations that can be employed to improve the performance of capacitive silicon resonators, including low motional resistance, small insertion loss, and high quality factor (Q). This paper contains an overview of device structures and working principles, fabrication technologies consisting of hermetic packaging, deep reactive-ion etching and neutral beam etching, and design considerations including mechanically coupled, movable electrode structures and piezoresistive heat engines.
AB - In this paper, we review the progress in recent studies on the performance enhancement methods for capacitive silicon resonators. We provide information on various fabrication technologies and design considerations that can be employed to improve the performance of capacitive silicon resonators, including low motional resistance, small insertion loss, and high quality factor (Q). This paper contains an overview of device structures and working principles, fabrication technologies consisting of hermetic packaging, deep reactive-ion etching and neutral beam etching, and design considerations including mechanically coupled, movable electrode structures and piezoresistive heat engines.
UR - http://www.scopus.com/inward/record.url?scp=85039064464&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85039064464&partnerID=8YFLogxK
U2 - 10.7567/JJAP.56.110101
DO - 10.7567/JJAP.56.110101
M3 - Article
AN - SCOPUS:85039064464
VL - 56
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 11
M1 - 110101
ER -