Profiling of carrier properties for shallow junctions using a new sub-nanometer step-by-step etching technique

Kazuo Tsutsui; Masamitsu Watanabe; Yasumasa Nakagawa; Kazunori Sakai; Takayuki Kai; Cheng Guo Jin; Yuichiro Sasaki; Kuniyuki Kakushima; Parhat Ahmet; Bunji Mizuno; Takeo Hattori; Hiroshi Iwai

doi:10.1109/IWJT.2008.4540018

Profiling of carrier properties for shallow junctions using a new sub-nanometer step-by-step etching technique

Kazuo Tsutsui, Masamitsu Watanabe, Yasumasa Nakagawa, Kazunori Sakai, Takayuki Kai, Cheng Guo Jin, Yuichiro Sasaki, Kuniyuki Kakushima, Parhat Ahmet, Bunji Mizuno, Takeo Hattori, Hiroshi Iwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A new step-by-step etching technique which is combined with electrical and/or physical analyses for in depth profiling of shallow junctions is proposed. The etching process is composed of scarified oxidation by using ozone and removal of the oxide formed. Combining the etching technique and Hall measurements, concentration profiles and mobility profiles of activated carriers were successfully obtained for the samples doped with boron (B) or arsenic (As) by the plasma doping (PD) method.

Original language	English
Title of host publication	IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology
Pages	58-61
Number of pages	4
DOIs	https://doi.org/10.1109/IWJT.2008.4540018
Publication status	Published - 2008
Externally published	Yes
Event	IWJT-2008 - International Workshop on Junction Technology - Shanghai, China Duration: 2008 May 15 → 2008 May 16

Publication series

Name	IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology

Other

Other	IWJT-2008 - International Workshop on Junction Technology
Country	China
City	Shanghai
Period	08/5/15 → 08/5/16

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

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10.1109/IWJT.2008.4540018

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Tsutsui, K., Watanabe, M., Nakagawa, Y., Sakai, K., Kai, T., Jin, C. G., Sasaki, Y., Kakushima, K., Ahmet, P., Mizuno, B., Hattori, T., & Iwai, H. (2008). Profiling of carrier properties for shallow junctions using a new sub-nanometer step-by-step etching technique. In IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology (pp. 58-61). [4540018] (IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology). https://doi.org/10.1109/IWJT.2008.4540018

Profiling of carrier properties for shallow junctions using a new sub-nanometer step-by-step etching technique. / Tsutsui, Kazuo; Watanabe, Masamitsu; Nakagawa, Yasumasa; Sakai, Kazunori; Kai, Takayuki; Jin, Cheng Guo; Sasaki, Yuichiro; Kakushima, Kuniyuki; Ahmet, Parhat; Mizuno, Bunji; Hattori, Takeo; Iwai, Hiroshi.

IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology. 2008. p. 58-61 4540018 (IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tsutsui, K, Watanabe, M, Nakagawa, Y, Sakai, K, Kai, T, Jin, CG, Sasaki, Y, Kakushima, K, Ahmet, P, Mizuno, B, Hattori, T & Iwai, H 2008, Profiling of carrier properties for shallow junctions using a new sub-nanometer step-by-step etching technique. in IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology., 4540018, IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology, pp. 58-61, IWJT-2008 - International Workshop on Junction Technology, Shanghai, China, 08/5/15. https://doi.org/10.1109/IWJT.2008.4540018

Tsutsui K, Watanabe M, Nakagawa Y, Sakai K, Kai T, Jin CG et al. Profiling of carrier properties for shallow junctions using a new sub-nanometer step-by-step etching technique. In IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology. 2008. p. 58-61. 4540018. (IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology). https://doi.org/10.1109/IWJT.2008.4540018

Tsutsui, Kazuo ; Watanabe, Masamitsu ; Nakagawa, Yasumasa ; Sakai, Kazunori ; Kai, Takayuki ; Jin, Cheng Guo ; Sasaki, Yuichiro ; Kakushima, Kuniyuki ; Ahmet, Parhat ; Mizuno, Bunji ; Hattori, Takeo ; Iwai, Hiroshi. / Profiling of carrier properties for shallow junctions using a new sub-nanometer step-by-step etching technique. IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology. 2008. pp. 58-61 (IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology).

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title = "Profiling of carrier properties for shallow junctions using a new sub-nanometer step-by-step etching technique",

abstract = "A new step-by-step etching technique which is combined with electrical and/or physical analyses for in depth profiling of shallow junctions is proposed. The etching process is composed of scarified oxidation by using ozone and removal of the oxide formed. Combining the etching technique and Hall measurements, concentration profiles and mobility profiles of activated carriers were successfully obtained for the samples doped with boron (B) or arsenic (As) by the plasma doping (PD) method.",

author = "Kazuo Tsutsui and Masamitsu Watanabe and Yasumasa Nakagawa and Kazunori Sakai and Takayuki Kai and Jin, {Cheng Guo} and Yuichiro Sasaki and Kuniyuki Kakushima and Parhat Ahmet and Bunji Mizuno and Takeo Hattori and Hiroshi Iwai",

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AU - Tsutsui, Kazuo

AU - Watanabe, Masamitsu

AU - Nakagawa, Yasumasa

AU - Sakai, Kazunori

AU - Kai, Takayuki

AU - Jin, Cheng Guo

AU - Sasaki, Yuichiro

AU - Kakushima, Kuniyuki

AU - Ahmet, Parhat

AU - Mizuno, Bunji

AU - Hattori, Takeo

AU - Iwai, Hiroshi

PY - 2008

Y1 - 2008

N2 - A new step-by-step etching technique which is combined with electrical and/or physical analyses for in depth profiling of shallow junctions is proposed. The etching process is composed of scarified oxidation by using ozone and removal of the oxide formed. Combining the etching technique and Hall measurements, concentration profiles and mobility profiles of activated carriers were successfully obtained for the samples doped with boron (B) or arsenic (As) by the plasma doping (PD) method.

AB - A new step-by-step etching technique which is combined with electrical and/or physical analyses for in depth profiling of shallow junctions is proposed. The etching process is composed of scarified oxidation by using ozone and removal of the oxide formed. Combining the etching technique and Hall measurements, concentration profiles and mobility profiles of activated carriers were successfully obtained for the samples doped with boron (B) or arsenic (As) by the plasma doping (PD) method.

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DO - 10.1109/IWJT.2008.4540018

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T3 - IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology

SP - 58

EP - 61

BT - IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology

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Y2 - 15 May 2008 through 16 May 2008

ER -

Profiling of carrier properties for shallow junctions using a new sub-nanometer step-by-step etching technique

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