TY - GEN
T1 - Profiling of carrier properties for shallow junctions using a new sub-nanometer step-by-step etching technique
AU - Tsutsui, Kazuo
AU - Watanabe, Masamitsu
AU - Nakagawa, Yasumasa
AU - Sakai, Kazunori
AU - Kai, Takayuki
AU - Jin, Cheng Guo
AU - Sasaki, Yuichiro
AU - Kakushima, Kuniyuki
AU - Ahmet, Parhat
AU - Mizuno, Bunji
AU - Hattori, Takeo
AU - Iwai, Hiroshi
PY - 2008
Y1 - 2008
N2 - A new step-by-step etching technique which is combined with electrical and/or physical analyses for in depth profiling of shallow junctions is proposed. The etching process is composed of scarified oxidation by using ozone and removal of the oxide formed. Combining the etching technique and Hall measurements, concentration profiles and mobility profiles of activated carriers were successfully obtained for the samples doped with boron (B) or arsenic (As) by the plasma doping (PD) method.
AB - A new step-by-step etching technique which is combined with electrical and/or physical analyses for in depth profiling of shallow junctions is proposed. The etching process is composed of scarified oxidation by using ozone and removal of the oxide formed. Combining the etching technique and Hall measurements, concentration profiles and mobility profiles of activated carriers were successfully obtained for the samples doped with boron (B) or arsenic (As) by the plasma doping (PD) method.
UR - http://www.scopus.com/inward/record.url?scp=50849120770&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=50849120770&partnerID=8YFLogxK
U2 - 10.1109/IWJT.2008.4540018
DO - 10.1109/IWJT.2008.4540018
M3 - Conference contribution
AN - SCOPUS:50849120770
SN - 9781424417384
T3 - IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology
SP - 58
EP - 61
BT - IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology
T2 - IWJT-2008 - International Workshop on Junction Technology
Y2 - 15 May 2008 through 16 May 2008
ER -