Production of semiconductor grade high-purity iron

Masahito Uchikoshi, Junichi Imaizumi, Hideka Shibuya, Tamás Kékesi, Kouji Mimura, Minoru Isshiki

Research output: Contribution to journalConference articlepeer-review

24 Citations (Scopus)


Semiconductor grade high-purity Fe will be required in practical use of β-FeSi2. However, high-purity Fe with more than 99.9999% in purity has not been produced commercially. Then, a process consisting of anion exchange in a HCl solution, hydrogen reduction and plasma arc melting has been developed for the production of high-purity Fe. All metallic impurities can be virtually removed from Fe by the two anion-exchange steps, in which some elements such as Cu and Mo are separated efficiently under reducing conditions by the addition of Fe powder at the 1st step, and the rest of impurities are surely separated under oxidizing conditions at the 2nd step. Non-metallic impurities such as oxygen, carbon and nitrogen also can be eliminated to very low levels by the hydrogen reduction and the hydrogen plasma arc melting steps.

Original languageEnglish
Pages (from-to)94-98
Number of pages5
JournalThin Solid Films
Issue number1
Publication statusPublished - 2004 Aug 2
Externally publishedYes
EventProceedings of Symposium on Semiconducting Silicides - Yokohama, Japan
Duration: 2003 Oct 82003 Oct 13


  • Anion exchange
  • Ar-H plasma arc melting
  • Elution curves
  • Iron
  • Ultra-high purity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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