Production of highly oxidized As on GaAs (110) at 20 K

Steven G. Anderson; J. M. Seo; T. Komeda; C. Capasso; J. H. Weaver

doi:10.1063/1.103259

Production of highly oxidized As on GaAs (110) at 20 K

Steven G. Anderson, J. M. Seo, T. Komeda, C. Capasso, J. H. Weaver

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

High-resolution synchrotron radiation photoemission results for O ₂ physisorbed on GaAs (110) show Ga-O and As-O formation that is a direct result of photon-induced reaction at 20 K. Spatially resolved studies show that the thickness and chemical composition of the semiconductor oxides vary in proporition to total beam irradiation. The extent of reaction can be controlled by varying the amount of oxygen present on the surface, and As ⁵⁺-like bonding configurations can be formed. These results can only be understood when competition between thermodynamic, kinetic, photon- and electron-mediated processes are considered.

Original language	English
Pages (from-to)	2510-2512
Number of pages	3
Journal	Applied Physics Letters
Volume	56
Issue number	25
DOIs	https://doi.org/10.1063/1.103259
Publication status	Published - 1990
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.103259

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@article{dcc11a315df84a58bf7d348adeb94dc5,

title = "Production of highly oxidized As on GaAs (110) at 20 K",

abstract = "High-resolution synchrotron radiation photoemission results for O 2 physisorbed on GaAs (110) show Ga-O and As-O formation that is a direct result of photon-induced reaction at 20 K. Spatially resolved studies show that the thickness and chemical composition of the semiconductor oxides vary in proporition to total beam irradiation. The extent of reaction can be controlled by varying the amount of oxygen present on the surface, and As 5+-like bonding configurations can be formed. These results can only be understood when competition between thermodynamic, kinetic, photon- and electron-mediated processes are considered.",

author = "Anderson, {Steven G.} and Seo, {J. M.} and T. Komeda and C. Capasso and Weaver, {J. H.}",

year = "1990",

doi = "10.1063/1.103259",

language = "English",

volume = "56",

pages = "2510--2512",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "25",

}

TY - JOUR

T1 - Production of highly oxidized As on GaAs (110) at 20 K

AU - Anderson, Steven G.

AU - Seo, J. M.

AU - Komeda, T.

AU - Capasso, C.

AU - Weaver, J. H.

PY - 1990

Y1 - 1990

N2 - High-resolution synchrotron radiation photoemission results for O 2 physisorbed on GaAs (110) show Ga-O and As-O formation that is a direct result of photon-induced reaction at 20 K. Spatially resolved studies show that the thickness and chemical composition of the semiconductor oxides vary in proporition to total beam irradiation. The extent of reaction can be controlled by varying the amount of oxygen present on the surface, and As 5+-like bonding configurations can be formed. These results can only be understood when competition between thermodynamic, kinetic, photon- and electron-mediated processes are considered.

AB - High-resolution synchrotron radiation photoemission results for O 2 physisorbed on GaAs (110) show Ga-O and As-O formation that is a direct result of photon-induced reaction at 20 K. Spatially resolved studies show that the thickness and chemical composition of the semiconductor oxides vary in proporition to total beam irradiation. The extent of reaction can be controlled by varying the amount of oxygen present on the surface, and As 5+-like bonding configurations can be formed. These results can only be understood when competition between thermodynamic, kinetic, photon- and electron-mediated processes are considered.

UR - http://www.scopus.com/inward/record.url?scp=4243054748&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4243054748&partnerID=8YFLogxK

U2 - 10.1063/1.103259

DO - 10.1063/1.103259

M3 - Article

AN - SCOPUS:4243054748

VL - 56

SP - 2510

EP - 2512

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 25

ER -

Production of highly oxidized As on GaAs (110) at 20 K

Abstract

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