Production of high density and low electron-temperature plasma by a modified grid-biasing method using inductively coupled RF discharge

Reijiro Ikada, Gouki Nishimura, Kohgi Kato, Satoru Iizuka

Research output: Contribution to journalConference articlepeer-review

12 Citations (Scopus)

Abstract

A noble method for the production of high density and low electron temperature plasma is presented. In plasma enhanced chemical vapor depositions, electron temperature affects the quality of deposited films, so a low-electron-temperature plasma is required to reduce excess dissociated radicals. Here, a grid-biasing method is modified and improved to produce high-electron-density and low-electron-temperature plasmas to increase deposition speed. As a result, the electron temperature is lowered in a range of 0.1-0.5 eV and the electron density is raised from the order of 109 to ∼2×1011 cm-3.

Original languageEnglish
Pages (from-to)55-58
Number of pages4
JournalThin Solid Films
Volume457
Issue number1
DOIs
Publication statusPublished - 2004 Jun 1
Event16th Symposium on Plasma Science for Materials (SPSM-16) - Tokyo, Japan
Duration: 2003 Jun 42003 Jun 5

Keywords

  • Electron temperature
  • Gamma effect
  • Grid bias method
  • Inductively coupled plasma

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Production of high density and low electron-temperature plasma by a modified grid-biasing method using inductively coupled RF discharge'. Together they form a unique fingerprint.

Cite this